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Nat Commun. 2015 Apr 21;6:6972. doi: 10.1038/ncomms7972.

Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.

Nature communications

Wenshan Zheng, Tian Xie, Yu Zhou, Y L Chen, Wei Jiang, Shuli Zhao, Jinxiong Wu, Yumei Jing, Yue Wu, Guanchu Chen, Yunfan Guo, Jianbo Yin, Shaoyun Huang, H Q Xu, Zhongfan Liu, Hailin Peng

Affiliations

  1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
  2. Department of Physics and Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK.
  3. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China.
  4. 1] Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China [2] Division of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.

PMID: 25898022 PMCID: PMC4411293 DOI: 10.1038/ncomms7972

Abstract

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm(2) V(-1) s(-1) at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W(-1) at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.

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