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Xie T, Liu G, Wen B, et al. Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides. ACS Appl Mater Interfaces. 2015;7(18):9660-7doi: 10.1021/acsami.5b01420.
Xie, T., Liu, G., Wen, B., Ha, J. Y., Nguyen, N. V., Motayed, A., & Debnath, R. (2015). Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides. ACS applied materials & interfaces, 7(18), 9660-7. https://doi.org/10.1021/acsami.5b01420
Xie, Ting, et al. "Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides." ACS applied materials & interfaces vol. 7,18 (2015): 9660-7. doi: https://doi.org/10.1021/acsami.5b01420
Xie T, Liu G, Wen B, Ha JY, Nguyen NV, Motayed A, Debnath R. Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides. ACS Appl Mater Interfaces. 2015 May 13;7(18):9660-7. doi: 10.1021/acsami.5b01420. Epub 2015 May 01. PMID: 25898025.
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ACS Appl Mater Interfaces. 2015 May 13;7(18):9660-7. doi: 10.1021/acsami.5b01420. Epub 2015 May 01.

Tunable Ultraviolet Photoresponse in Solution-Processed p-n Junction Photodiodes Based on Transition-Metal Oxides.

ACS applied materials & interfaces

Ting Xie, Guannan Liu, Baomei Wen, Jong Y Ha, Nhan V Nguyen, Abhishek Motayed, Ratan Debnath

Affiliations

  1. †Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
  2. ‡Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, United States.
  3. §Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.
  4. ?Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.

PMID: 25898025 DOI: 10.1021/acsami.5b01420

Abstract

Solution-processed p-n heterojunction photodiodes have been fabricated based on transition-metal oxides in which NiO and ternary Zn(1-x)Mg(x)O (x = 0-0.1) have been employed as p-type and n-type semiconductors, respectively. Composition-related structural, electrical, and optical properties are also investigated for all the films. It has been observed that the bandgap of Zn(1-x)Mg(x)O films can be tuned between 3.24 and 3.49 eV by increasing Mg content. The fabricated highly visible-blind p-n junction photodiodes show an excellent rectification ratio along with good photoresponse and quantum efficiency under ultraviolet (UV) illumination. With an applied reverse bias of 1 V and depending on the value of x, the maximum responsivity of the devices varies between 0.22 and 0.4 A/W and the detectivity varies between 0.17 × 10(12) and 2.2 × 10(12) cm (Hz)(1/2)/W. The photodetectors show an excellent UV-to-visible rejection ratio. Compositional nonuniformity has been observed locally in the alloyed films with x = 0.1, which is manifested in photoresponse and X-ray analysis data. This paper demonstrates simple solution-processed, low cost, band tunable photodiodes with excellent figures of merit operated under low bias.

Keywords: NiO; TMO; Zn1−xMgxO; photodetector

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