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Kim KH, Kim JE, Bae SM, et al. Application of soft lithography to metal-induced lateral crystallization of amorphous Si thin films involving self-assembly monolayers and atomic layer deposition. J Nanosci Nanotechnol. 2014;14(8):5885-8doi: 10.1166/jnn.2014.8323.
Kim, K. H., Kim, J. E., Bae, S. M., Chung, T. M., Kim, C. G., An, K. S., & Hwang, J. H. (2014). Application of soft lithography to metal-induced lateral crystallization of amorphous Si thin films involving self-assembly monolayers and atomic layer deposition. Journal of nanoscience and nanotechnology, 14(8), 5885-8. https://doi.org/10.1166/jnn.2014.8323
Kim, Kyu-Hun, et al. "Application of soft lithography to metal-induced lateral crystallization of amorphous Si thin films involving self-assembly monolayers and atomic layer deposition." Journal of nanoscience and nanotechnology vol. 14,8 (2014): 5885-8. doi: https://doi.org/10.1166/jnn.2014.8323
Kim KH, Kim JE, Bae SM, Chung TM, Kim CG, An KS, Hwang JH. Application of soft lithography to metal-induced lateral crystallization of amorphous Si thin films involving self-assembly monolayers and atomic layer deposition. J Nanosci Nanotechnol. 2014 Aug;14(8):5885-8. doi: 10.1166/jnn.2014.8323. PMID: 25936021.
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J Nanosci Nanotechnol. 2014 Aug;14(8):5885-8. doi: 10.1166/jnn.2014.8323.

Application of soft lithography to metal-induced lateral crystallization of amorphous Si thin films involving self-assembly monolayers and atomic layer deposition.

Journal of nanoscience and nanotechnology

Kyu-Hun Kim, Jeong-Eun Kim, Seung-Muk Bae, Taek-Mo Chung, Chang Gyoun Kim, Ki-Seok An, Jin-Ha Hwang

PMID: 25936021 DOI: 10.1166/jnn.2014.8323

Abstract

Micro-contact printing of self-assembly monolayers (SAMs), i.e., octadecyl-trichlorosilane (OTS) was combined with self limiting atomic layer deposition in order to fabricate the selective deposition of nickel oxide on amorphous Si thin films. The localized nickel species facilitated metal-induced crystallization (MIC) and at later stages, metal-induced lateral crystallization (MILC) in amorphous Si thin films at the elevated temperatures ranging from 500 °C to 550 °C. The uniform coating of SAMs onto amorphous Si thin films was monitored using physical/chemical characterization, i.e., atomic force microscopy, electron microscopy, and Raman spectroscopy. The crystalline feature was found to be superior to the counterpart solid-phase crystallization. The effectiveness of SAMs appears to provide the microscale patterning in addition to the sophisticated control against nickel-species.

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