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Choi JH, Shojiki K, Tanikawa T, et al. Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by metalorganic vapor phase epitaxy. J Nanosci Nanotechnol. 2014;14(8):6112-5doi: 10.1166/jnn.2014.8306.
Choi, J. H., Shojiki, K., Tanikawa, T., Hanada, T., Katayama, R., & Matsuoka, T. (2014). Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by metalorganic vapor phase epitaxy. Journal of nanoscience and nanotechnology, 14(8), 6112-5. https://doi.org/10.1166/jnn.2014.8306
Choi, J H, et al. "Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by metalorganic vapor phase epitaxy." Journal of nanoscience and nanotechnology vol. 14,8 (2014): 6112-5. doi: https://doi.org/10.1166/jnn.2014.8306
Choi JH, Shojiki K, Tanikawa T, Hanada T, Katayama R, Matsuoka T. Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by metalorganic vapor phase epitaxy. J Nanosci Nanotechnol. 2014 Aug;14(8):6112-5. doi: 10.1166/jnn.2014.8306. PMID: 25936067.
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J Nanosci Nanotechnol. 2014 Aug;14(8):6112-5. doi: 10.1166/jnn.2014.8306.

Effect of sapphire nitridation and group-III source flow rate ratio on In-incorporation into InGaN grown by metalorganic vapor phase epitaxy.

Journal of nanoscience and nanotechnology

J H Choi, K Shojiki, T Tanikawa, T Hanada, R Katayama, T Matsuoka

PMID: 25936067 DOI: 10.1166/jnn.2014.8306

Abstract

In-composition of N-polar InGaN films on the sapphire substrate with the surface nitridation was investigated. By varying the ratio of the group-III source flow rate from 0.7 to 0.95, the In-composition and the surface morphologies of InGaN films were changed. The In-composition of N-polar InGaN films was affected by the strain relaxation and the surface morphologies.

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