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Shin HW, Shin JC, Kim DY, et al. Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method. J Nanosci Nanotechnol. 2014;14(8):6297-300doi: 10.1166/jnn.2014.8301.
Shin, H. W., Shin, J. C., Kim, D. Y., Choi, W. J., & Choe, J. W. (2014). Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method. Journal of nanoscience and nanotechnology, 14(8), 6297-300. https://doi.org/10.1166/jnn.2014.8301
Shin, Hyun Wook, et al. "Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method." Journal of nanoscience and nanotechnology vol. 14,8 (2014): 6297-300. doi: https://doi.org/10.1166/jnn.2014.8301
Shin HW, Shin JC, Kim DY, Choi WJ, Choe JW. Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method. J Nanosci Nanotechnol. 2014 Aug;14(8):6297-300. doi: 10.1166/jnn.2014.8301. PMID: 25936106.
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J Nanosci Nanotechnol. 2014 Aug;14(8):6297-300. doi: 10.1166/jnn.2014.8301.

Structural and optical properties of the In(x)Ga(1-x)As nanowires grown on SiO2 via vapor-liquid-solid method.

Journal of nanoscience and nanotechnology

Hyun Wook Shin, Jae Cheol Shin, Do Yang Kim, Won Jun Choi, Jeong-Woo Choe

PMID: 25936106 DOI: 10.1166/jnn.2014.8301

Abstract

We report the crystal growth of the In(x)Ga(1-x)As nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the In(x)Ga(1-x)As NW. The In(x)Ga(1-x)As NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from In(x)Ga(1-x)As NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal In(x)Ga(1-x)As NWs are applicable to the various electrical and optical devices.

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