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McCarthy CL, Webber DH, Schueller EC, et al. Solution-Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol-Amine Solvent Mixture. Angew Chem Int Ed Engl. 2015;54(29):8378-81doi: 10.1002/anie.201503353.
McCarthy, C. L., Webber, D. H., Schueller, E. C., & Brutchey, R. L. (2015). Solution-Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol-Amine Solvent Mixture. Angewandte Chemie (International ed. in English), 54(29), 8378-81. https://doi.org/10.1002/anie.201503353
McCarthy, Carrie L, et al. "Solution-Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol-Amine Solvent Mixture." Angewandte Chemie (International ed. in English) vol. 54,29 (2015): 8378-81. doi: https://doi.org/10.1002/anie.201503353
McCarthy CL, Webber DH, Schueller EC, Brutchey RL. Solution-Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol-Amine Solvent Mixture. Angew Chem Int Ed Engl. 2015 Jul 13;54(29):8378-81. doi: 10.1002/anie.201503353. Epub 2015 Jun 02. PMID: 26036319.
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Angew Chem Int Ed Engl. 2015 Jul 13;54(29):8378-81. doi: 10.1002/anie.201503353. Epub 2015 Jun 02.

Solution-Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol-Amine Solvent Mixture.

Angewandte Chemie (International ed. in English)

Carrie L McCarthy, David H Webber, Emily C Schueller, Richard L Brutchey

Affiliations

  1. Department of Chemistry, University of Southern California, Los Angeles, CA 90089-0744 (USA).
  2. Department of Chemistry, University of Southern California, Los Angeles, CA 90089-0744 (USA). [email protected].

PMID: 26036319 DOI: 10.1002/anie.201503353

Abstract

A thiol-amine solvent mixture is used to dissolve ten inexpensive bulk oxides (Cu2O, ZnO, GeO2, As2O3, Ag2O, CdO, SnO, Sb2O3, PbO, and Bi2O3) under ambient conditions. Dissolved oxides can be converted to the corresponding sulfides using the thiol as the sulfur source, while selenides and tellurides can be accessed upon mixing with a stoichiometric amount of dissolved selenium or tellurium. The practicality of this method is illustrated by solution depositing Sb2Se3 thin films from compound inks of dissolved Sb2O3 and selenium that give high photoelectrochemical current response. The direct band gap of the resulting material can be tuned from 1.2-1.6 eV by modulating the ink formulation to give compositionally controlled Sb2Se(3-x)S(x) alloys.

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: metal chalcogenides; photoelectrochemistry; semiconductors; solution processing; thin films

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