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Shibata N, Findlay SD, Sasaki H, et al. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy. Sci Rep. 2015;5:10040doi: 10.1038/srep10040.
Shibata, N., Findlay, S. D., Sasaki, H., Matsumoto, T., Sawada, H., Kohno, Y., Otomo, S., Minato, R., & Ikuhara, Y. (2015). Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy. Scientific reports, 510040. https://doi.org/10.1038/srep10040
Shibata, Naoya, et al. "Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy." Scientific reports vol. 5 (2015): 10040. doi: https://doi.org/10.1038/srep10040
Shibata N, Findlay SD, Sasaki H, Matsumoto T, Sawada H, Kohno Y, Otomo S, Minato R, Ikuhara Y. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy. Sci Rep. 2015 Jun 12;5:10040. doi: 10.1038/srep10040. PMID: 26067359; PMCID: PMC4464396.
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Sci Rep. 2015 Jun 12;5:10040. doi: 10.1038/srep10040.

Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy.

Scientific reports

Naoya Shibata, Scott D Findlay, Hirokazu Sasaki, Takao Matsumoto, Hidetaka Sawada, Yuji Kohno, Shinya Otomo, Ryuichiro Minato, Yuichi Ikuhara

Affiliations

  1. 1] Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan [2] Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan.
  2. School of Physics and Astronomy, Monash University, Victoria 3800, Australia.
  3. Furukawa Electric Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, 220-0073, Japan.
  4. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan.
  5. JEOL Ltd., 1-2-3 Musashino, Akishima, Tokyo 196-8558, Japan.
  6. 1] Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo 113-8656, Japan [2] Nanostructures Research Laboratory, Japan Fine Ceramic Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan.

PMID: 26067359 PMCID: PMC4464396 DOI: 10.1038/srep10040

Abstract

Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning transmission electron microscopy with segmented type detector is used to image a p-n junction in a GaAs compound semiconductor. Differential phase contrast imaging is able to both clearly visualize and quantify the projected, built-in electric field in the p-n junction. The technique is further shown capable of sensitively detecting the electric field variations due to dopant concentration steps within both p-type and n-type regions. Through live differential phase contrast imaging, this technique can potentially be used to image the electromagnetic field structure of new materials and devices even under working conditions.

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