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Youh MJ, Tseng CL, Jhuang MH, et al. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters. Sci Rep. 2015;5:10976doi: 10.1038/srep10976.
Youh, M. J., Tseng, C. L., Jhuang, M. H., Chiu, S. C., Huang, L. H., Gong, J. A., & Li, Y. Y. (2015). Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters. Scientific reports, 510976. https://doi.org/10.1038/srep10976
Youh, Meng-Jey, et al. "Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters." Scientific reports vol. 5 (2015): 10976. doi: https://doi.org/10.1038/srep10976
Youh MJ, Tseng CL, Jhuang MH, Chiu SC, Huang LH, Gong JA, Li YY. Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters. Sci Rep. 2015 Jun 04;5:10976. doi: 10.1038/srep10976. PMID: 26042359; PMCID: PMC4650707.
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Sci Rep. 2015 Jun 04;5:10976. doi: 10.1038/srep10976.

Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters.

Scientific reports

Meng-Jey Youh, Chun-Lung Tseng, Meng-Han Jhuang, Sheng-Cheng Chiu, Li-Hu Huang, Jyun-An Gong, Yuan-Yao Li

Affiliations

  1. Department of Information Technology, Hsing Wu University, New Taipei City 244, Taiwan, R.O.C.
  2. Wafer Process Engineering Department, Epistar Corporation, Tainan 744, Taiwan, R.O.C.
  3. Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan, R.O.C.
  4. Product Technology Department, AU Optronics Corporation, Taoyuan 325, Taiwan, R.O.C.
  5. 1] Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan, R.O.C [2] Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, Chia-Yi 62102, Taiwan, R.O.C [3] Department of Chemical Engineering, National Chung Cheng University, Chia-Yi 621, Taiwan, R.O.C.

PMID: 26042359 PMCID: PMC4650707 DOI: 10.1038/srep10976

Abstract

A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm(2)) is in the range of 2.04% - 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10,952 cd/cm(2) and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.

References

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