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Lorite I, Zandalazini C, Esquinazi P, et al. Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires. J Phys Condens Matter. 2015;27(25):256002doi: 10.1088/0953-8984/27/25/256002.
Lorite, I., Zandalazini, C., Esquinazi, P., Spemann, D., Friedländer, S., Pöppl, A., Michalsky, T., Grundmann, M., Vogt, J., Meijer, J., Heluani, S. P., Ohldag, H., Adeagbo, W. A., Nayak, S. K., Hergert, W., Ernst, A., & Hoffmann, M. (2015). Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires. Journal of physics. Condensed matter : an Institute of Physics journal, 27(25), 256002. https://doi.org/10.1088/0953-8984/27/25/256002
Lorite, I, et al. "Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires." Journal of physics. Condensed matter : an Institute of Physics journal vol. 27,25 (2015): 256002. doi: https://doi.org/10.1088/0953-8984/27/25/256002
Lorite I, Zandalazini C, Esquinazi P, Spemann D, Friedländer S, Pöppl A, Michalsky T, Grundmann M, Vogt J, Meijer J, Heluani SP, Ohldag H, Adeagbo WA, Nayak SK, Hergert W, Ernst A, Hoffmann M. Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires. J Phys Condens Matter. 2015 Jul 01;27(25):256002. doi: 10.1088/0953-8984/27/25/256002. Epub 2015 Jun 05. PMID: 26043764.
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J Phys Condens Matter. 2015 Jul 01;27(25):256002. doi: 10.1088/0953-8984/27/25/256002. Epub 2015 Jun 05.

Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires.

Journal of physics. Condensed matter : an Institute of Physics journal

I Lorite, C Zandalazini, P Esquinazi, D Spemann, S Friedländer, A Pöppl, T Michalsky, M Grundmann, J Vogt, J Meijer, S P Heluani, H Ohldag, W A Adeagbo, S K Nayak, W Hergert, A Ernst, M Hoffmann

Affiliations

  1. Institut für Experimentelle Physik II, University of Leipzig, Linnéstraße 5, D-04103 Leipzig, Germany.

PMID: 26043764 DOI: 10.1088/0953-8984/27/25/256002

Abstract

The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.

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