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Science. 2015 Jun 05;348(6239):1112-5. doi: 10.1126/science.1260561.

Multiferroics. Magnetoelectric domain control in multiferroic TbMnO₃.

Science (New York, N.Y.)

Masakazu Matsubara, Sebastian Manz, Masahito Mochizuki, Teresa Kubacka, Ayato Iyama, Nadir Aliouane, Tsuyoshi Kimura, Steven L Johnson, Dennis Meier, Manfred Fiebig

Affiliations

  1. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland. Department of Physics, Tohoku University, Sendai 980-8578, Japan. [email protected] [email protected].
  2. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland. [email protected] [email protected].
  3. Department of Physics and Mathematics, Aoyama Gakuin University, Sagamihara, Kanagawa 229-8558, Japan. PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan.
  4. Department of Physics, ETH Zurich, Auguste-Piccard-Hof 1, 8093 Zurich, Switzerland.
  5. Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan.
  6. Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, 5232 Villigen, Switzerland.
  7. Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.

PMID: 26045431 DOI: 10.1126/science.1260561

Abstract

The manipulation of domains by external fields in ferroic materials is of major interest for applications. In multiferroics with strongly coupled magnetic and electric order, however, the magnetoelectric coupling on the level of the domains is largely unexplored. We investigated the field-induced domain dynamics of TbMnO3 in the multiferroic ground state and across a first-order spin-flop transition. In spite of the discontinuous nature of this transition, the reorientation of the order parameters is deterministic and preserves the multiferroic domain pattern. Landau-Lifshitz-Gilbert simulations reveal that this behavior is intrinsic. Such magnetoelectric correlations in spin-driven ferroelectrics may lead to domain wall-based nanoelectronics devices.

Copyright © 2015, American Association for the Advancement of Science.

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