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Prasai D, Klots AR, Newaz AK, et al. Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors. Nano Lett. 2015;15(7):4374-80doi: 10.1021/acs.nanolett.5b00514.
Prasai, D., Klots, A. R., Newaz, A. K., Niezgoda, J. S., Orfield, N. J., Escobar, C. A., Wynn, A., Efimov, A., Jennings, G. K., Rosenthal, S. J., & Bolotin, K. I. (2015). Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors. Nano letters, 15(7), 4374-80. https://doi.org/10.1021/acs.nanolett.5b00514
Prasai, Dhiraj, et al. "Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors." Nano letters vol. 15,7 (2015): 4374-80. doi: https://doi.org/10.1021/acs.nanolett.5b00514
Prasai D, Klots AR, Newaz AK, Niezgoda JS, Orfield NJ, Escobar CA, Wynn A, Efimov A, Jennings GK, Rosenthal SJ, Bolotin KI. Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors. Nano Lett. 2015 Jul 08;15(7):4374-80. doi: 10.1021/acs.nanolett.5b00514. Epub 2015 Jun 03. PMID: 26027714.
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Nano Lett. 2015 Jul 08;15(7):4374-80. doi: 10.1021/acs.nanolett.5b00514. Epub 2015 Jun 03.

Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors.

Nano letters

Dhiraj Prasai, Andrey R Klots, A K M Newaz, J Scott Niezgoda, Noah J Orfield, Carlos A Escobar, Alex Wynn, Anatoly Efimov, G Kane Jennings, Sandra J Rosenthal, Kirill I Bolotin

Affiliations

  1. §Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, United States.
  2. #Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, United States.
  3. ?Vanderbilt Institute for Nanoscale Science and Engineering, Nashville, Tennessee 37235, United States.
  4. ?Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States.

PMID: 26027714 DOI: 10.1021/acs.nanolett.5b00514

Abstract

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (∼500%) changes in the FRET rate. This in turn allows for up to ∼75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

Keywords: FRET; MoS2; Quantum dots; TMDCs; electrical modulation

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