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Ervin MH. Etching holes in graphene supercapacitor electrodes for faster performance. Nanotechnology. 2015;26(23):234003doi: 10.1088/0957-4484/26/23/234003.
Ervin, M. H. (2015). Etching holes in graphene supercapacitor electrodes for faster performance. Nanotechnology, 26(23), 234003. https://doi.org/10.1088/0957-4484/26/23/234003
Ervin, Matthew H. "Etching holes in graphene supercapacitor electrodes for faster performance." Nanotechnology vol. 26,23 (2015): 234003. doi: https://doi.org/10.1088/0957-4484/26/23/234003
Ervin MH. Etching holes in graphene supercapacitor electrodes for faster performance. Nanotechnology. 2015 Jun 12;26(23):234003. doi: 10.1088/0957-4484/26/23/234003. Epub 2015 May 21. PMID: 25994042.
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Nanotechnology. 2015 Jun 12;26(23):234003. doi: 10.1088/0957-4484/26/23/234003. Epub 2015 May 21.

Etching holes in graphene supercapacitor electrodes for faster performance.

Nanotechnology

Matthew H Ervin

Affiliations

  1. US Army Research Laboratory, Adelphi MD 20783-1197, USA.

PMID: 25994042 DOI: 10.1088/0957-4484/26/23/234003

Abstract

Graphene is being widely investigated as a material to replace activated carbon in supercapacitor (electrochemical capacitor) electrodes. Supercapacitors have much higher energy density, but are typically slow devices (∼0.1 Hz) compared to other types of capacitors. Here, top-down semiconductor processing has been applied to graphene-based electrodes in order to fabricate ordered arrays of holes through the graphene electrodes. This is demonstrated to increase the speed of the electrodes by reducing the ionic impedance through the electrode thickness. This approach may also be applicable to speeding up other types of devices, such as batteries and sensors, that use porous electrodes.

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