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Mater Sci Semicond Process. 2015 Oct;38:278-289. doi: 10.1016/j.mssp.2015.04.001.

Synthesis and characterization of [Zn(acetate).

Materials science in semiconductor processing

Jesse S Hyslop, Amanda R Boydstun, Theron R Fereday, Joanna R Rusch, Jennifer L Strunk, Christian T Wall, Cecelia C Pena, Nicholas L McKibben, Jerry D Harris, Aaron Thurber, Alex Punnoose, Jason Brotherton, Pamela Walker, Lloyd Lowe, Blake Rapp, Shem Purnell, William B Knowlton, Seth M Hubbard, Brian J Frost

Affiliations

  1. Department of Chemistry, Northwest Nazarene University, Nampa, Idaho 83686.
  2. Department of Physics, Boise State University, Boise, Idaho 83752.
  3. Department Materials Science & Engineering, Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83752.
  4. Department of Physics, Rochester Institute of Technology, Rochester, New York 14623.
  5. Department of Chemistry, University of Nevada, Reno, NV 89557.

PMID: 26085801 PMCID: PMC4465802 DOI: 10.1016/j.mssp.2015.04.001

Abstract

As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate amines, yet, they have received little attention. The synthesis and single crystal X-ray structure of [Zn(acetate)

Keywords: ZnO; crystal structure; single source precursors

References

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Grant support