Display options
Cite
Dais C, Mussler G, Fromherz T, et al. SiGe quantum dot crystals with periods down to 35 nm. Nanotechnology. 2015;26(25):255302doi: 10.1088/0957-4484/26/25/255302.
Dais, C., Mussler, G., Fromherz, T., Müller, E., Solak, H. H., & Grützmacher, D. (2015). SiGe quantum dot crystals with periods down to 35 nm. Nanotechnology, 26(25), 255302. https://doi.org/10.1088/0957-4484/26/25/255302
Dais, C, et al. "SiGe quantum dot crystals with periods down to 35 nm." Nanotechnology vol. 26,25 (2015): 255302. doi: https://doi.org/10.1088/0957-4484/26/25/255302
Dais C, Mussler G, Fromherz T, Müller E, Solak HH, Grützmacher D. SiGe quantum dot crystals with periods down to 35 nm. Nanotechnology. 2015 Jan 26;26(25):255302. doi: 10.1088/0957-4484/26/25/255302. Epub 2015 Jun 02. PMID: 26031338.
Copy Download .nbib Format: NLM
Share it on

Nanotechnology. 2015 Jan 26;26(25):255302. doi: 10.1088/0957-4484/26/25/255302. Epub 2015 Jun 02.

SiGe quantum dot crystals with periods down to 35 nm.

Nanotechnology

C Dais, G Mussler, T Fromherz, E Müller, H H Solak, D Grützmacher

Affiliations

  1. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen, Switzerland.

PMID: 26031338 DOI: 10.1088/0957-4484/26/25/255302

Abstract

By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.

Publication Types