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Bonsu RO, Kim H, O'Donohue C, et al. Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition. Inorg Chem. 2015;54(15):7536-47doi: 10.1021/acs.inorgchem.5b01124.
Bonsu, R. O., Kim, H., O'Donohue, C., Korotkov, R. Y., Abboud, K. A., Anderson, T. J., & McElwee-White, L. (2015). Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition. Inorganic chemistry, 54(15), 7536-47. https://doi.org/10.1021/acs.inorgchem.5b01124
Bonsu, Richard O, et al. "Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition." Inorganic chemistry vol. 54,15 (2015): 7536-47. doi: https://doi.org/10.1021/acs.inorgchem.5b01124
Bonsu RO, Kim H, O'Donohue C, Korotkov RY, Abboud KA, Anderson TJ, McElwee-White L. Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition. Inorg Chem. 2015 Aug 03;54(15):7536-47. doi: 10.1021/acs.inorgchem.5b01124. Epub 2015 Jul 14. PMID: 26172992.
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Inorg Chem. 2015 Aug 03;54(15):7536-47. doi: 10.1021/acs.inorgchem.5b01124. Epub 2015 Jul 14.

Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition.

Inorganic chemistry

Richard O Bonsu, Hankook Kim, Christopher O'Donohue, Roman Y Korotkov, Khalil A Abboud, Timothy J Anderson, Lisa McElwee-White

Affiliations

  1. †Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200, United States.
  2. ‡Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005, United States.
  3. §Arkema Inc., 900 First Avenue, King of Prussia, Pennsylvania 19406, United States.

PMID: 26172992 DOI: 10.1021/acs.inorgchem.5b01124

Abstract

The soluble bis(fluoroalkoxide) dioxo tungsten(VI) complexes WO2(OR)2(DME) [1, R = C(CF3)2CH3; 2, R = C(CF3)3] have been synthesized by alkoxide-chloride metathesis and evaluated as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WOx. The (1)H NMR and (19)F NMR spectra of 1 and 2 are consistent with an equilibrium between the dimethoxyethane (DME) complexes 1 and 2 and the solvato complexes WO2(OR)2(CD3CN)2 [1b, R = C(CF3)2CH3; 2b, R = C(CF3)3] in acetonitrile-d3 solution. Studies of the fragmentation of 1 and 2 by mass spectrometry and thermolysis resulted in observation of DME and the corresponding alcohols, with hexafluoroisobutylene also generated from 1. DFT calculations on possible decomposition mechanisms for 1 located pathways for hydrogen abstraction by a terminal oxo to form hexafluoroisobutylene, followed by dimerization of the resulting terminal hydroxide complex and dissociation of the alcohol. AACVD using 1 occurred between 100 and 550 °C and produced both substoichiometric amorphous WOx and a polycrystalline W18O49 monoclinic phase, which exhibits 1-D preferred growth in the [010] direction. The work function (4.9-5.6 eV), mean optical transmittance (39.1-91.1%), conductivity (0.4-2.3 S/cm), and surface roughness (3.4-7.9 nm) of the WOx films are suitable for charge injection layers in organic electronics.

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