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Chen Q, Robertson AW, He K, et al. Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations. ACS Nano. 2015;9(8):8599-608doi: 10.1021/acsnano.5b03801.
Chen, Q., Robertson, A. W., He, K., Gong, C., Yoon, E., Lee, G. D., & Warner, J. H. (2015). Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations. ACS nano, 9(8), 8599-608. https://doi.org/10.1021/acsnano.5b03801
Chen, Qu, et al. "Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations." ACS nano vol. 9,8 (2015): 8599-608. doi: https://doi.org/10.1021/acsnano.5b03801
Chen Q, Robertson AW, He K, Gong C, Yoon E, Lee GD, Warner JH. Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations. ACS Nano. 2015 Aug 25;9(8):8599-608. doi: 10.1021/acsnano.5b03801. Epub 2015 Jul 23. PMID: 26204434.
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ACS Nano. 2015 Aug 25;9(8):8599-608. doi: 10.1021/acsnano.5b03801. Epub 2015 Jul 23.

Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations.

ACS nano

Qu Chen, Alex W Robertson, Kuang He, Chuncheng Gong, Euijoon Yoon, Gun-Do Lee, Jamie H Warner

Affiliations

  1. Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
  2. Department of Materials Science and Engineering, Seoul National University , Seoul 151-742, Korea.

PMID: 26204434 DOI: 10.1021/acsnano.5b03801

Abstract

Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the C-C bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.

Keywords: DFT; TEM; aberration correction; defects; divacancy; graphene

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