Display options
Cite
Jha AK, van Dam HT, Kupinski MA, et al. Simulating Silicon Photomultiplier Response to Scintillation Light. IEEE Trans Nucl Sci. 2013;30(1):336-351doi: 10.1109/TNS.2012.2234135.
Jha, A. K., van Dam, H. T., Kupinski, M. A., & Clarkson, E. (2013). Simulating Silicon Photomultiplier Response to Scintillation Light. IEEE transactions on nuclear science, 30(1), 336-351. https://doi.org/10.1109/TNS.2012.2234135
Jha, Abhinav K, et al. "Simulating Silicon Photomultiplier Response to Scintillation Light." IEEE transactions on nuclear science vol. 30,1 (2013): 336-351. doi: https://doi.org/10.1109/TNS.2012.2234135
Jha AK, van Dam HT, Kupinski MA, Clarkson E. Simulating Silicon Photomultiplier Response to Scintillation Light. IEEE Trans Nucl Sci. 2013 Feb;30(1):336-351. doi: 10.1109/TNS.2012.2234135. PMID: 26236040; PMCID: PMC4519993.
Copy Download .nbib Format: NLM
Share it on

IEEE Trans Nucl Sci. 2013 Feb;30(1):336-351. doi: 10.1109/TNS.2012.2234135.

Simulating Silicon Photomultiplier Response to Scintillation Light.

IEEE transactions on nuclear science

Abhinav K Jha, Herman T van Dam, Matthew A Kupinski, Eric Clarkson

Affiliations

  1. College of Optical Sciences, University of Arizona, Tucson AZ 85721 USA.
  2. Department of Radiation, Detection and Medical Imaging, Delft University of Technology, Delft, 2629 JB, The Netherlands.
  3. College of Optical Sciences and the Department of Medical Imaging, University of Arizona, Tucson AZ 85721 USA.

PMID: 26236040 PMCID: PMC4519993 DOI: 10.1109/TNS.2012.2234135

Abstract

The response of a Silicon Photomultiplier (SiPM) to optical signals is affected by many factors including photon-detection efficiency, recovery time, gain, optical crosstalk, afterpulsing, dark count, and detector dead time. Many of these parameters vary with overvoltage and temperature. When used to detect scintillation light, there is a complicated non-linear relationship between the incident light and the response of the SiPM. In this paper, we propose a combined discrete-time discrete-event Monte Carlo (MC) model to simulate SiPM response to scintillation light pulses. Our MC model accounts for all relevant aspects of the SiPM response, some of which were not accounted for in the previous models. We also derive and validate analytic expressions for the single-photoelectron response of the SiPM and the voltage drop across the quenching resistance in the SiPM microcell. These analytic expressions consider the effect of all the circuit elements in the SiPM and accurately simulate the time-variation in overvoltage across the microcells of the SiPM. Consequently, our MC model is able to incorporate the variation of the different SiPM parameters with varying overvoltage. The MC model is compared with measurements on SiPM-based scintillation detectors and with some cases for which the response is known

Keywords: Circuit transient analysis; Monte Carlo model; electrical characteristics; silicon photomultiplier; single-photoelectron response

References

  1. Opt Express. 2011 Jan 17;19(2):1665-79 - PubMed
  2. Appl Opt. 1996 Apr 20;35(12):1956-76 - PubMed
  3. Phys Med Biol. 2011 Jul 7;56(13):4147-59 - PubMed
  4. Phys Med Biol. 2009 Nov 7;54(21):6495-513 - PubMed
  5. J Nucl Med. 2007 Apr;48(4):661-73 - PubMed
  6. IEEE Nucl Sci Symp Conf Rec (1997). 2010;:1203-1208 - PubMed
  7. J Nucl Med. 2011 Apr;52(4):572-9 - PubMed
  8. Phys Med Biol. 2010 Oct 7;55(19):5817-31 - PubMed
  9. IEEE Trans Nucl Sci. 2009 Jun 1;56(3):725 - PubMed
  10. Phys Med Biol. 2006 Mar 7;51(5):1113-27 - PubMed

Publication Types

Grant support