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Yau HM, Yan ZB, Chan NY, et al. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions. Sci Rep. 2015;5:12826doi: 10.1038/srep12826.
Yau, H. M., Yan, Z. B., Chan, N. Y., Au, K., Wong, C. M., Leung, C. W., Zhang, F. Y., Gao, X. S., & Dai, J. Y. (2015). Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions. Scientific reports, 512826. https://doi.org/10.1038/srep12826
Yau, H M, et al. "Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions." Scientific reports vol. 5 (2015): 12826. doi: https://doi.org/10.1038/srep12826
Yau HM, Yan ZB, Chan NY, Au K, Wong CM, Leung CW, Zhang FY, Gao XS, Dai JY. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions. Sci Rep. 2015 Aug 04;5:12826. doi: 10.1038/srep12826. PMID: 26239505; PMCID: PMC4523833.
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Sci Rep. 2015 Aug 04;5:12826. doi: 10.1038/srep12826.

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

Scientific reports

H M Yau, Z B Yan, N Y Chan, K Au, C M Wong, C W Leung, F Y Zhang, X S Gao, J Y Dai

Affiliations

  1. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
  2. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
  3. Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.

PMID: 26239505 PMCID: PMC4523833 DOI: 10.1038/srep12826

Abstract

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

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