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Opoku C, Dahiya AS, Oshman C, et al. Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires. Nanotechnology. 2015;26(35):355704doi: 10.1088/0957-4484/26/35/355704.
Opoku, C., Dahiya, A. S., Oshman, C., Daumont, C., Cayrel, F., Poulin-Vittrant, G., Alquier, D., & Camara, N. (2015). Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires. Nanotechnology, 26(35), 355704. https://doi.org/10.1088/0957-4484/26/35/355704
Opoku, Charles, et al. "Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires." Nanotechnology vol. 26,35 (2015): 355704. doi: https://doi.org/10.1088/0957-4484/26/35/355704
Opoku C, Dahiya AS, Oshman C, Daumont C, Cayrel F, Poulin-Vittrant G, Alquier D, Camara N. Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires. Nanotechnology. 2015 Sep 04;26(35):355704. doi: 10.1088/0957-4484/26/35/355704. Epub 2015 Aug 06. PMID: 26245930.
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Nanotechnology. 2015 Sep 04;26(35):355704. doi: 10.1088/0957-4484/26/35/355704. Epub 2015 Aug 06.

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

Nanotechnology

Charles Opoku, Abhishek Singh Dahiya, Christopher Oshman, Christophe Daumont, Frederic Cayrel, Guylaine Poulin-Vittrant, Daniel Alquier, Nicolas Camara

Affiliations

  1. Université François Rabelais de Tours, CNRS, GREMAN UMR 7347, 16 rue Pierre et Marie Curie, 37071 TOURS Cedex2, France.

PMID: 26245930 DOI: 10.1088/0957-4484/26/35/355704

Abstract

The production of large quantities of single crystalline semiconducting ZnO nanowires (NWs) at low cost can offer practical solutions to realizing several novel electronic/optoelectronic and sensor applications on an industrial scale. The present work demonstrates high-density single crystalline NWs synthesized by a multiple cycle hydrothermal process at ∼100 °C. The high carrier concentration in such ZnO NWs is greatly suppressed by a simple low cost thermal annealing step in ambient air at ∼450 °C. Single ZnO NW FETs incorporating these modified NWs are characterized, revealing strong metal work function-dependent charge transport, unobtainable with as-grown hydrothermal ZnO NWs. Single ZnO NW FETs with Al as source and drain (s/d) contacts show excellent performance metrics, including low off-state currents (fA range), high on/off ratio (10(5)-10(7)), steep subthreshold slope (<600 mV/dec) and excellent field-effect carrier mobility (5-11 cm(2)/V-s). Modified ZnO NWs with platinum s/d contacts demonstrate excellent Schottky transport characteristics, markedly different from a reference ZnO NW device with Al contacts. This included abrupt reverse bias current-voltage saturation characteristics and positive temperature coefficient (∼0.18 eV to 0.13 eV). This work is envisaged to benefit many areas of hydrothermal ZnO NW research, such as NW FETs, piezoelectric energy recovery, piezotronics and Schottky diodes.

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