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Das S, Keum JK, Browning JF, et al. Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures. Nanoscale. 2015;7(38):15576-83doi: 10.1039/c5nr03332b.
Das, S., Keum, J. K., Browning, J. F., Gu, G., Yang, B., Dyck, O., Do, C., Chen, W., Chen, J., Ivanov, I. N., Hong, K., Rondinone, A. J., Joshi, P. C., Geohegan, D. B., Duscher, G., & Xiao, K. (2015). Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures. Nanoscale, 7(38), 15576-83. https://doi.org/10.1039/c5nr03332b
Das, Sanjib, et al. "Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures." Nanoscale vol. 7,38 (2015): 15576-83. doi: https://doi.org/10.1039/c5nr03332b
Das S, Keum JK, Browning JF, Gu G, Yang B, Dyck O, Do C, Chen W, Chen J, Ivanov IN, Hong K, Rondinone AJ, Joshi PC, Geohegan DB, Duscher G, Xiao K. Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures. Nanoscale. 2015 Oct 14;7(38):15576-83. doi: 10.1039/c5nr03332b. Epub 2015 Jul 29. PMID: 26220775.
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Nanoscale. 2015 Oct 14;7(38):15576-83. doi: 10.1039/c5nr03332b. Epub 2015 Jul 29.

Correlating high power conversion efficiency of PTB7:PC71BM inverted organic solar cells with nanoscale structures.

Nanoscale

Sanjib Das, Jong K Keum, James F Browning, Gong Gu, Bin Yang, Ondrej Dyck, Changwoo Do, Wei Chen, Jihua Chen, Ilia N Ivanov, Kunlun Hong, Adam J Rondinone, Pooran C Joshi, David B Geohegan, Gerd Duscher, Kai Xiao

Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996, USA.

PMID: 26220775 DOI: 10.1039/c5nr03332b

Abstract

Advances in material design and device engineering led to inverted organic solar cells (i-OSCs) with superior power conversion efficiencies (PCEs) compared to their "conventional" counterparts, in addition to the well-known better ambient stability. Here, we report an in-depth morphology study of the i-OSC active and cathode modifying layers, employing a model system with a well-established bulk-heterojunction, PTB7:PC71BM as the active layer and poly-[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as the cathode surface modifying layer. We have also identified the role of a processing additive, 1,8-diiodooctane (DIO), used in the spin-casting of the active layer to increase PCE. Using various characterization techniques, we demonstrate that the high PCEs of i-OSCs are due to the diffusion of electron-accepting PC71BM into the PFN layer, resulting in improved electron transport. The diffusion occurs when residual solvent molecules in the spun-cast film act as a plasticizer. Addition of DIO to the casting solution results in more PC71BM diffusion and therefore more efficient electron transport. This work provides important insight and guidance to further enhancement of i-OSC performance by materials and interface engineering.

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