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Song HZ, Takemoto K, Miyazawa T, et al. High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band. Opt Express. 2015;23(12):16264-72doi: 10.1364/OE.23.016264.
Song, H. Z., Takemoto, K., Miyazawa, T., Takatsu, M., Iwamoto, S., Ekawa, M., Yamamoto, T., & Arakawa, Y. (2015). High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band. Optics express, 23(12), 16264-72. https://doi.org/10.1364/OE.23.016264
Song, Hai-Zhi, et al. "High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band." Optics express vol. 23,12 (2015): 16264-72. doi: https://doi.org/10.1364/OE.23.016264
Song HZ, Takemoto K, Miyazawa T, Takatsu M, Iwamoto S, Ekawa M, Yamamoto T, Arakawa Y. High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band. Opt Express. 2015 Jun 15;23(12):16264-72. doi: 10.1364/OE.23.016264. PMID: 26193599.
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Opt Express. 2015 Jun 15;23(12):16264-72. doi: 10.1364/OE.23.016264.

High quality-factor Si/SiO(2)-InP hybrid micropillar cavities with submicrometer diameter for 1.55-μm telecommunication band.

Optics express

Hai-Zhi Song, Kazuya Takemoto, Toshiyuki Miyazawa, Motomu Takatsu, Satoshi Iwamoto, Mitsuru Ekawa, Tsuyoshi Yamamoto, Yasuhiko Arakawa

PMID: 26193599 DOI: 10.1364/OE.23.016264

Abstract

We theoretically demonstrate high quality(Q)-factor micropillar cavities at 1.55-μm wavelength based on Si/SiO(2)-InP hybrid structure. An adiabatic design in distributed Bragg reflectors (DBRs) improves Q-factor for upto 3 orders of magnitude, while reducing the diameter to sub-micrometer. A moderate Q-factor of ~3000 and a Purcell factor of ~200 are realized by only 2 taper segments and fewer conventional DBR pairs, enabling single photon generation at GHz rate. As the taper segment number is increased, Q-factor can be boosted to ~10(5)-10(6), enabling coherent exchange between the emitter and the optical mode at 1.55 μm, which is applicable in quantum information networks.

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