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Cheng Y, Shao Y, Parent LR, et al. Interface Promoted Reversible Mg Insertion in Nanostructured Tin-Antimony Alloys. Adv Mater. 2015;27(42):6598-605doi: 10.1002/adma.201502378.
Cheng, Y., Shao, Y., Parent, L. R., Sushko, M. L., Li, G., Sushko, P. V., Browning, N. D., Wang, C., & Liu, J. (2015). Interface Promoted Reversible Mg Insertion in Nanostructured Tin-Antimony Alloys. Advanced materials (Deerfield Beach, Fla.), 27(42), 6598-605. https://doi.org/10.1002/adma.201502378
Cheng, Yingwen, et al. "Interface Promoted Reversible Mg Insertion in Nanostructured Tin-Antimony Alloys." Advanced materials (Deerfield Beach, Fla.) vol. 27,42 (2015): 6598-605. doi: https://doi.org/10.1002/adma.201502378
Cheng Y, Shao Y, Parent LR, Sushko ML, Li G, Sushko PV, Browning ND, Wang C, Liu J. Interface Promoted Reversible Mg Insertion in Nanostructured Tin-Antimony Alloys. Adv Mater. 2015 Nov;27(42):6598-605. doi: 10.1002/adma.201502378. Epub 2015 Sep 30. PMID: 26421524.
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Adv Mater. 2015 Nov;27(42):6598-605. doi: 10.1002/adma.201502378. Epub 2015 Sep 30.

Interface Promoted Reversible Mg Insertion in Nanostructured Tin-Antimony Alloys.

Advanced materials (Deerfield Beach, Fla.)

Yingwen Cheng, Yuyan Shao, Lucas R Parent, Maria L Sushko, Guosheng Li, Peter V Sushko, Nigel D Browning, Chongmin Wang, Jun Liu

Affiliations

  1. Energy & Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA.
  2. Joint Center for Energy Storage Research, Pacific Northwest National Laboratory, Richland, WA, 99352, USA.
  3. Fundamental & Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA.
  4. Environmental and Molecular Sciences Laboratory (EMSL), Pacific Northwest National Laboratory, Richland, WA, 99352, USA.

PMID: 26421524 DOI: 10.1002/adma.201502378

Abstract

An interface promoted approach is developed for guiding the design of stable and high capacity materials for Mg batteries using SnSb alloys as model materials. Experimental and theoretical studies reveal that the SnSb alloy has exceptionally high reversible capacity (420 mA h g(-1)), excellent rate capability, and good cyclic stability for hosting Mg ions due to the stabilization/promotion effects of the interfaces between the multicomponent phases generated during repeated magnesiation-demagnesiation.

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: alloy compounds; interface control; magnesium batteries; reversible Mg insertion

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