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Ryu HS, Park MJ, Oh SK, et al. Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots. Nanoscale Res Lett. 2015;10(1):356doi: 10.1186/s11671-015-1064-3.
Ryu, H. S., Park, M. J., Oh, S. K., Oh, H. S., Baek, J. H., & Kwak, J. S. (2015). Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots. Nanoscale research letters, 10(1), 356. https://doi.org/10.1186/s11671-015-1064-3
Ryu, Ho-Soung, et al. "Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots." Nanoscale research letters vol. 10,1 (2015): 356. doi: https://doi.org/10.1186/s11671-015-1064-3
Ryu HS, Park MJ, Oh SK, Oh HS, Baek JH, Kwak JS. Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots. Nanoscale Res Lett. 2015 Dec;10(1):356. doi: 10.1186/s11671-015-1064-3. Epub 2015 Sep 15. PMID: 26370131; PMCID: PMC4569603.
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Nanoscale Res Lett. 2015 Dec;10(1):356. doi: 10.1186/s11671-015-1064-3. Epub 2015 Sep 15.

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots.

Nanoscale research letters

Ho-Soung Ryu, Min Joo Park, Seung Kyu Oh, Hwa-Sub Oh, Jong-Hyeob Baek, Joon Seop Kwak

Affiliations

  1. Department of Printed Electronics Engineering, Sunchon National University, Jeonnam, 540-742, South Korea.
  2. LED Device Research Center, Korea Photonics Technology Institute, Gwangju, 500-779, South Korea.
  3. Department of Printed Electronics Engineering, Sunchon National University, Jeonnam, 540-742, South Korea. [email protected].

PMID: 26370131 PMCID: PMC4569603 DOI: 10.1186/s11671-015-1064-3

Abstract

The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlGaInP-based VI-LEDs with the n-AlGaInP nanopillars provided 25 % light output power enhancement compared to VI-LEDs with a surface-roughened n-AlGaInP because of the reduced total internal reflection by the nanopillars at the n-AlGaInP/air interface with a large refractive index difference of 1.9.

Keywords: AlGaInP; Light-emitting diodes; Nanodots; Nanopillars

References

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