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Gierz I, Calegari F, Aeschlimann S, et al. Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales. Phys Rev Lett. 2015;115(8):086803doi: 10.1103/PhysRevLett.115.086803.
Gierz, I., Calegari, F., Aeschlimann, S., Chávez Cervantes, M., Cacho, C., Chapman, R. T., Springate, E., Link, S., Starke, U., Ast, C. R., & Cavalleri, A. (2015). Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales. Physical review letters, 115(8), 086803. https://doi.org/10.1103/PhysRevLett.115.086803
Gierz, I, et al. "Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales." Physical review letters vol. 115,8 (2015): 086803. doi: https://doi.org/10.1103/PhysRevLett.115.086803
Gierz I, Calegari F, Aeschlimann S, Chávez Cervantes M, Cacho C, Chapman RT, Springate E, Link S, Starke U, Ast CR, Cavalleri A. Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales. Phys Rev Lett. 2015 Aug 21;115(8):086803. doi: 10.1103/PhysRevLett.115.086803. Epub 2015 Aug 21. PMID: 26340199.
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Phys Rev Lett. 2015 Aug 21;115(8):086803. doi: 10.1103/PhysRevLett.115.086803. Epub 2015 Aug 21.

Tracking Primary Thermalization Events in Graphene with Photoemission at Extreme Time Scales.

Physical review letters

I Gierz, F Calegari, S Aeschlimann, M Chávez Cervantes, C Cacho, R T Chapman, E Springate, S Link, U Starke, C R Ast, A Cavalleri

Affiliations

  1. Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany.
  2. Institute for Photonics and Nanotechnologies, IFN-CNR, 20133 Milano, Italy.
  3. Central Laser Facility, STFC Rutherford Appleton Laboratory, OX11 0QX Harwell, United Kingdom.
  4. Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany.
  5. Department of Physics, Clarendon Laboratory, University of Oxford, OX1 3PU Oxford, United Kingdom.

PMID: 26340199 DOI: 10.1103/PhysRevLett.115.086803

Abstract

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging energy with a third carrier, which is either accelerated or decelerated. Inverse Auger scattering is generally suppressed, as the decelerated carriers must have excess energies higher than the band gap itself. In graphene, which is gapless, inverse Auger scattering is, instead, predicted to be dominant at the earliest time delays. Here, <8  fs extreme-ultraviolet pulses are used to detect this imbalance, tracking both the number of excited electrons and their kinetic energy with time-and angle-resolved photoemission spectroscopy. Over a time window of approximately 25 fs after absorption of the pump pulse, we observe an increase in conduction band carrier density and a simultaneous decrease of the average carrier kinetic energy, revealing that relaxation is in fact dominated by inverse Auger scattering. Measurements of carrier scattering at extreme time scales by photoemission will serve as a guide to ultrafast control of electronic properties in solids for petahertz electronics.

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