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Phys Rev Lett. 2015 Aug 21;115(8):087201. doi: 10.1103/PhysRevLett.115.087201. Epub 2015 Aug 17.

Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface.

Physical review letters

Mingda Li, Cui-Zu Chang, Brian J Kirby, Michelle E Jamer, Wenping Cui, Lijun Wu, Peng Wei, Yimei Zhu, Don Heiman, Ju Li, Jagadeesh S Moodera

Affiliations

  1. Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  2. Fracsis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  3. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA.
  4. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
  5. Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA.
  6. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA.
  7. Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  8. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

PMID: 26340203 DOI: 10.1103/PhysRevLett.115.087201

Abstract

Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb(2-x)V(x)Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.

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