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Ishida N, Jo M, Mano T, et al. Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy. Nanoscale. 2015;7(40):16773-80doi: 10.1039/c5nr04193g.
Ishida, N., Jo, M., Mano, T., Sakuma, Y., Noda, T., & Fujita, D. (2015). Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy. Nanoscale, 7(40), 16773-80. https://doi.org/10.1039/c5nr04193g
Ishida, Nobuyuki, et al. "Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy." Nanoscale vol. 7,40 (2015): 16773-80. doi: https://doi.org/10.1039/c5nr04193g
Ishida N, Jo M, Mano T, Sakuma Y, Noda T, Fujita D. Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy. Nanoscale. 2015 Oct 28;7(40):16773-80. doi: 10.1039/c5nr04193g. Epub 2015 Sep 24. PMID: 26400667.
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Nanoscale. 2015 Oct 28;7(40):16773-80. doi: 10.1039/c5nr04193g. Epub 2015 Sep 24.

Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy.

Nanoscale

Nobuyuki Ishida, Masafumi Jo, Takaaki Mano, Yoshiki Sakuma, Takeshi Noda, Daisuke Fujita

Affiliations

  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. [email protected].

PMID: 26400667 DOI: 10.1039/c5nr04193g

Abstract

The interaction between nitrogen (N) impurity states in III-V compounds plays a key role in controlling optoelectronic properties of the host materials. Here, we use scanning tunneling microscopy to characterize the spatial distribution and electronic properties of N impurity states in dilute GaNAs. We demonstrated that the N impurity states can be directly visualized by taking empty state current images using the multipass scanning method. The N impurity states broadened over several nanometers and exhibited a highly anisotropic distribution with a bowtie-like shape on the GaAs(110) surface, which can be explained by anisotropic propagation of strain along the zigzag chains of Ga and As atoms in the {110} plane. Our experimental findings provide strong insights into a possible role of N impurity states in modifying properties of the host materials.

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