Display options
Cite
Ahn HS, Bard AJ. Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode. Angew Chem Int Ed Engl. 2015;54(46):13753-7doi: 10.1002/anie.201506963.
Ahn, H. S., & Bard, A. J. (2015). Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode. Angewandte Chemie (International ed. in English), 54(46), 13753-7. https://doi.org/10.1002/anie.201506963
Ahn, Hyun S, and Bard, Allen J. "Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode." Angewandte Chemie (International ed. in English) vol. 54,46 (2015): 13753-7. doi: https://doi.org/10.1002/anie.201506963
Ahn HS, Bard AJ. Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode. Angew Chem Int Ed Engl. 2015 Nov 09;54(46):13753-7. doi: 10.1002/anie.201506963. Epub 2015 Sep 17. PMID: 26377039.
Copy Download .nbib Format: NLM
Share it on

Angew Chem Int Ed Engl. 2015 Nov 09;54(46):13753-7. doi: 10.1002/anie.201506963. Epub 2015 Sep 17.

Single-Nanoparticle Collision Events: Tunneling Electron Transfer on a Titanium Dioxide Passivated n-Silicon Electrode.

Angewandte Chemie (International ed. in English)

Hyun S Ahn, Allen J Bard

Affiliations

  1. Center for Electrochemistry, Department of Chemistry, The University of Texas at Austin, Austin, TX 78712 (USA).
  2. Center for Electrochemistry, Department of Chemistry, The University of Texas at Austin, Austin, TX 78712 (USA). [email protected].

PMID: 26377039 DOI: 10.1002/anie.201506963

Abstract

Single-nanoparticle collisions were observed on an n-type silicon electrode (600 μm diameter) passivated by a thin layer of amorphous TiO2, where the current steps occurred by tunneling electron transfer. The observed collision frequency was in reasonable agreement with that predicted from theory. The isolated electrode, after a collision experiment, with a Pt/TiO2/n-Si architecture was shown to retain the photoelectrochemical properties of n-Si without photocorrosion or current decay. The Pt/TiO2/n-Si electrode produced 19 mA cm(-2) of photocurrent density under 100 mW cm(-2) irradiation from a xenon lamp during oxygen evolution without current fading for over 12 h.

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: electrochemistry; nanoparticles; photoelectrochemistry; surface passivation; tunneling

Publication Types