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Baeumer C, Schmitz C, Ramadan AH, et al. Spectromicroscopic insights for rational design of redox-based memristive devices. Nat Commun. 2015;6:8610doi: 10.1038/ncomms9610.
Baeumer, C., Schmitz, C., Ramadan, A. H., Du, H., Skaja, K., Feyer, V., Müller, P., Arndt, B., Jia, C. L., Mayer, J., De Souza, R. A., Michael Schneider, C., Waser, R., & Dittmann, R. (2015). Spectromicroscopic insights for rational design of redox-based memristive devices. Nature communications, 68610. https://doi.org/10.1038/ncomms9610
Baeumer, Christoph, et al. "Spectromicroscopic insights for rational design of redox-based memristive devices." Nature communications vol. 6 (2015): 8610. doi: https://doi.org/10.1038/ncomms9610
Baeumer C, Schmitz C, Ramadan AH, Du H, Skaja K, Feyer V, Müller P, Arndt B, Jia CL, Mayer J, De Souza RA, Michael Schneider C, Waser R, Dittmann R. Spectromicroscopic insights for rational design of redox-based memristive devices. Nat Commun. 2015 Oct 19;6:8610. doi: 10.1038/ncomms9610. PMID: 26477940; PMCID: PMC4634325.
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Nat Commun. 2015 Oct 19;6:8610. doi: 10.1038/ncomms9610.

Spectromicroscopic insights for rational design of redox-based memristive devices.

Nature communications

Christoph Baeumer, Christoph Schmitz, Amr H H Ramadan, Hongchu Du, Katharina Skaja, Vitaliy Feyer, Philipp Müller, Benedikt Arndt, Chun-Lin Jia, Joachim Mayer, Roger A De Souza, Claus Michael Schneider, Rainer Waser, Regina Dittmann

Affiliations

  1. Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany.
  2. Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT, 52056 Aachen, Germany.
  3. Ernst Ruska-Centre, Forschungszentrum Juelich GmbH and RWTH Aachen University, 52425 Juelich, Germany.
  4. Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, 52056 Aachen, Germany.

PMID: 26477940 PMCID: PMC4634325 DOI: 10.1038/ncomms9610

Abstract

The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti(4+) and Ti(3+). While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.

References

  1. Nat Nanotechnol. 2008 Jul;3(7):429-33 - PubMed
  2. Adv Mater. 2011 Dec 15;23(47):5633-40 - PubMed
  3. Ultramicroscopy. 2015 Apr;151:62-7 - PubMed
  4. Adv Mater. 2010 Aug 24;22(32):3573-7 - PubMed
  5. Nano Lett. 2010 Oct 13;10(10):3828-35 - PubMed
  6. Phys Chem Chem Phys. 2005 May 7;7(9):2053-60 - PubMed
  7. Nat Mater. 2010 May;9(5):403-6 - PubMed
  8. Phys Rev B Condens Matter. 1991 Sep 15;44(11):5419-5422 - PubMed
  9. J Phys Condens Matter. 2009 Aug 5;21(31):314013 - PubMed
  10. Adv Mater. 2014 Mar 5;26(9):1462-7 - PubMed
  11. Sci Rep. 2015 Jul 20;5:11829 - PubMed
  12. Nat Mater. 2007 Nov;6(11):833-40 - PubMed
  13. J Phys Chem B. 2006 Jun 22;110(24):11780-95 - PubMed
  14. Phys Chem Chem Phys. 2006 Feb 21;8(7):890-7 - PubMed
  15. Adv Mater. 2010 Nov 16;22(43):4819-22 - PubMed
  16. Nanoscale. 2014 Nov 7;6(21):12864-76 - PubMed
  17. Phys Chem Chem Phys. 2008 Apr 21;10(15):2067-72 - PubMed
  18. Nat Commun. 2013;4:1371 - PubMed

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