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Wang J, Xu L, Lee YJ, et al. Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices. Nano Lett. 2015;15(11):7627-32doi: 10.1021/acs.nanolett.5b03473.
Wang, J., Xu, L., Lee, Y. J., De Anda Villa, M., Malko, A. V., & Hsu, J. W. (2015). Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices. Nano letters, 15(11), 7627-32. https://doi.org/10.1021/acs.nanolett.5b03473
Wang, Jian, et al. "Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices." Nano letters vol. 15,11 (2015): 7627-32. doi: https://doi.org/10.1021/acs.nanolett.5b03473
Wang J, Xu L, Lee YJ, De Anda Villa M, Malko AV, Hsu JW. Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices. Nano Lett. 2015 Nov 11;15(11):7627-32. doi: 10.1021/acs.nanolett.5b03473. Epub 2015 Oct 14. PMID: 26451625.
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Nano Lett. 2015 Nov 11;15(11):7627-32. doi: 10.1021/acs.nanolett.5b03473. Epub 2015 Oct 14.

Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices.

Nano letters

Jian Wang, Liang Xu, Yun-Ju Lee, Manuel De Anda Villa, Anton V Malko, Julia W P Hsu

Affiliations

  1. Department of Materials Science and Engineering and ‡Department of Physics, The University of Texas at Dallas , Richardson, Texas 75080, United States.

PMID: 26451625 DOI: 10.1021/acs.nanolett.5b03473

Abstract

Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron-exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer doping low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. These understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.

Keywords: Fermi level pinning; capacitance−voltage; charge transfer; polaron−exciton quenching; recombination

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