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Lübben M, Karakolis P, Ioannou-Sougleridis V, et al. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. Adv Mater. 2015;27(40):6202-7doi: 10.1002/adma.201502574.
Lübben, M., Karakolis, P., Ioannou-Sougleridis, V., Normand, P., Dimitrakis, P., & Valov, I. (2015). Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. Advanced materials (Deerfield Beach, Fla.), 27(40), 6202-7. https://doi.org/10.1002/adma.201502574
Lübben, Michael, et al. "Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices." Advanced materials (Deerfield Beach, Fla.) vol. 27,40 (2015): 6202-7. doi: https://doi.org/10.1002/adma.201502574
Lübben M, Karakolis P, Ioannou-Sougleridis V, Normand P, Dimitrakis P, Valov I. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. Adv Mater. 2015 Oct 28;27(40):6202-7. doi: 10.1002/adma.201502574. Epub 2015 Sep 10. PMID: 26456484.
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Adv Mater. 2015 Oct 28;27(40):6202-7. doi: 10.1002/adma.201502574. Epub 2015 Sep 10.

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.

Advanced materials (Deerfield Beach, Fla.)

Michael Lübben, Panagiotis Karakolis, Vassilios Ioannou-Sougleridis, Pascal Normand, Panagiotis Dimitrakis, Ilia Valov

Affiliations

  1. Peter Grünberg Institute (Electronic Materials - PGI-7), Forschungszentrum Jülich, 52425, Jülich, Germany.
  2. Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.

PMID: 26456484 DOI: 10.1002/adma.201502574

Abstract

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories

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