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Kim JH, Lee JB, An GG, et al. Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame. Sci Rep. 2015;5:16903doi: 10.1038/srep16903.
Kim, J. H., Lee, J. B., An, G. G., Yang, S. M., Chung, W. S., Park, H. S., & Hong, J. P. (2015). Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame. Scientific reports, 516903. https://doi.org/10.1038/srep16903
Kim, Jae-Hong, et al. "Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame." Scientific reports vol. 5 (2015): 16903. doi: https://doi.org/10.1038/srep16903
Kim JH, Lee JB, An GG, Yang SM, Chung WS, Park HS, Hong JP. Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame. Sci Rep. 2015 Nov 20;5:16903. doi: 10.1038/srep16903. PMID: 26584638; PMCID: PMC4653616.
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Sci Rep. 2015 Nov 20;5:16903. doi: 10.1038/srep16903.

Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame.

Scientific reports

Jae-Hong Kim, Ja-Bin Lee, Gwang-Guk An, Seung-Mo Yang, Woo-Seong Chung, Hae-Soo Park, Jin-Pyo Hong

Affiliations

  1. Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea.
  2. Reserach Institute for Convergence of Basic Science, Novel Functional Materials and Devices Lab, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
  3. Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, South Korea.

PMID: 26584638 PMCID: PMC4653616 DOI: 10.1038/srep16903

Abstract

Perpendicularly magnetized tunnel junctions (p-MTJs) show promise as reliable candidates for next-generation memory due to their outstanding features. However, several key challenges remain that affect CoFeB/MgO-based p-MTJ performance. One significant issue is the low thermal stability (Δ) due to the rapid perpendicular magnetic anisotropy (PMA) degradation during annealing at temperatures greater than 300 °C. Thus, the ability to provide thermally robust PMA characteristics is a key steps towards extending the use of these materials. Here, we examine the influence of a W spacer on double MgO/CoFeB/W/CoFeB/MgO frames as a generic alternative layer to ensure thermally-robust PMAs at temperatures up to 425 °C. The thickness-dependent magnetic features of the W layer were evaluated at various annealing temperatures to confirm the presence of strong ferromagnetic interlayer coupling at an optimized 0.55 nm W spacer thickness. Using this W layer we achieved a higher Δ of 78 for an approximately circular 20 nm diameter free layer device.

References

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