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Tag A, Bader B, Huck C, et al. Effect of spatial distribution of dissipated power on modeling of SMR BAW resonators at high power levels. IEEE Trans Ultrason Ferroelectr Freq Control. 2015;62(10):1856-64doi: 10.1109/TUFFC.2015.007036.
Tag, A., Bader, B., Huck, C., Karolewski, D., Pitschi, M., Weigel, R., & Hagelauer, A. (2015). Effect of spatial distribution of dissipated power on modeling of SMR BAW resonators at high power levels. IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 62(10), 1856-64. https://doi.org/10.1109/TUFFC.2015.007036
Tag, Andreas, et al. "Effect of spatial distribution of dissipated power on modeling of SMR BAW resonators at high power levels." IEEE transactions on ultrasonics, ferroelectrics, and frequency control vol. 62,10 (2015): 1856-64. doi: https://doi.org/10.1109/TUFFC.2015.007036
Tag A, Bader B, Huck C, Karolewski D, Pitschi M, Weigel R, Hagelauer A. Effect of spatial distribution of dissipated power on modeling of SMR BAW resonators at high power levels. IEEE Trans Ultrason Ferroelectr Freq Control. 2015 Oct;62(10):1856-64. doi: 10.1109/TUFFC.2015.007036. PMID: 26470048.
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IEEE Trans Ultrason Ferroelectr Freq Control. 2015 Oct;62(10):1856-64. doi: 10.1109/TUFFC.2015.007036.

Effect of spatial distribution of dissipated power on modeling of SMR BAW resonators at high power levels.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control

Andreas Tag, Bernhard Bader, Christian Huck, Dominik Karolewski, Maximilian Pitschi, Robert Weigel, Amelie Hagelauer

PMID: 26470048 DOI: 10.1109/TUFFC.2015.007036

Abstract

The modeling of bulk acoustic wave resonators at elevated power levels has been improved by taking the spatial distribution of the dominating loss mechanisms into account. The spatial distribution of the dissipated power enables more accurate modeling of the temperature increase caused by the applied power. Thus, it is also possible to more accurately model the frequency shifts of the resonators' impedance curves resulting from the temperature increase caused by the applied power. Simulation and measurement results for the temperatures and impedances of the resonators with different layerstacks at high power loads are presented. The simulation and measurement results are in good agreement, confirming the presented modeling approach. Furthermore, the de-embedding procedure used to obtain vectorial scattering parameters of the resonators during high power loads, the according measurement setup, and the procedure for measuring absolute temperatures by infrared thermography are discussed.

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