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Vasconcelos HM, Eddrief M, Zheng Y, et al. Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy. ACS Nano. 2015;10(1):1132-8doi: 10.1021/acsnano.5b06430.
Vasconcelos, H. M., Eddrief, M., Zheng, Y., Demaille, D., Hidki, S., Fonda, E., Novikova, A., Fujii, J., Torelli, P., Salles, B. R., Vobornik, I., Panaccione, G., de Oliveira, A. J., Marangolo, M., & Vidal, F. (2016). Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy. ACS nano, 10(1), 1132-8. https://doi.org/10.1021/acsnano.5b06430
Vasconcelos, Hugo Menezes do Nascimento, et al. "Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy." ACS nano vol. 10,1 (2016): 1132-8. doi: https://doi.org/10.1021/acsnano.5b06430
Vasconcelos HM, Eddrief M, Zheng Y, Demaille D, Hidki S, Fonda E, Novikova A, Fujii J, Torelli P, Salles BR, Vobornik I, Panaccione G, de Oliveira AJ, Marangolo M, Vidal F. Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy. ACS Nano. 2016 Jan 26;10(1):1132-8. doi: 10.1021/acsnano.5b06430. Epub 2015 Dec 10. PMID: 26653134.
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ACS Nano. 2016 Jan 26;10(1):1132-8. doi: 10.1021/acsnano.5b06430. Epub 2015 Dec 10.

Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy.

ACS nano

Hugo Menezes do Nascimento Vasconcelos, Mahmoud Eddrief, Yunlin Zheng, Dominique Demaille, Sarah Hidki, Emiliano Fonda, Anastasiia Novikova, Jun Fujii, Piero Torelli, Benjamin Rache Salles, Ivana Vobornik, Giancarlo Panaccione, Adilson Jesus Aparecido de Oliveira, Massimiliano Marangolo, Franck Vidal

Affiliations

  1. Sorbonne Universités , UPMC Univ Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, F-75005 Paris, France.
  2. Departamento de Física, Universidade Federal de São Carlos , CP 676, 13565-905 São Carlos, SP, Brazil.
  3. Synchrotron Soleil , L'Orme des Merisiers Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France.
  4. Istituto Officina dei Materiali (IOM) - CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy.
  5. Instituto de Física, Universidade Federal do Rio de Janeiro , 21941-972 Rio de Janeiro, RJ, Brazil.

PMID: 26653134 DOI: 10.1021/acsnano.5b06430

Abstract

We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3. Monoclinic Fe3Se4 is identified as the main secondary phase through detailed structural measurements. Due to the presence of the hard ferrimagnetic Fe3Se4 inclusions, the system exhibits a very large coercive field at low temperature and room temperature magnetic ordering. Despite this composite structure and the proximity of a magnetic phase, the surface electronic structure of Bi2Se3 is preserved, as shown by the persistence of a gapless Dirac cone at Γ.

Keywords: ferrimagnetism; hybrid compounds; molecular beam epitaxy; phase segregation; topological insulator

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