Display options
Cite
Han HV, Lu AY, Lu LS, et al. Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment. ACS Nano. 2016;10(1):1454-61doi: 10.1021/acsnano.5b06960.
Han, H. V., Lu, A. Y., Lu, L. S., Huang, J. K., Li, H., Hsu, C. L., Lin, Y. C., Chiu, M. H., Suenaga, K., Chu, C. W., Kuo, H. C., Chang, W. H., Li, L. J., & Shi, Y. (2016). Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment. ACS nano, 10(1), 1454-61. https://doi.org/10.1021/acsnano.5b06960
Han, Hau-Vei, et al. "Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment." ACS nano vol. 10,1 (2016): 1454-61. doi: https://doi.org/10.1021/acsnano.5b06960
Han HV, Lu AY, Lu LS, Huang JK, Li H, Hsu CL, Lin YC, Chiu MH, Suenaga K, Chu CW, Kuo HC, Chang WH, Li LJ, Shi Y. Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment. ACS Nano. 2016 Jan 26;10(1):1454-61. doi: 10.1021/acsnano.5b06960. Epub 2016 Jan 05. PMID: 26716765.
Copy Download .nbib Format: NLM
Share it on

ACS Nano. 2016 Jan 26;10(1):1454-61. doi: 10.1021/acsnano.5b06960. Epub 2016 Jan 05.

Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe2 by Hydrohalic Acid Treatment.

ACS nano

Hau-Vei Han, Ang-Yu Lu, Li-Syuan Lu, Jing-Kai Huang, Henan Li, Chang-Lung Hsu, Yung-Chang Lin, Ming-Hui Chiu, Kazu Suenaga, Chih-Wei Chu, Hao-Chung Kuo, Wen-Hao Chang, Lain-Jong Li, Yumeng Shi

Affiliations

  1. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, 23955-6900, Saudi Arabia.
  2. Research Center for Applied Sciences , 128 Sec. 2, Academia Road, Nankang, Taipei 11529, Taiwan.
  3. National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8560, Japan.
  4. Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology , Hsinchu 300, Taiwan.

PMID: 26716765 DOI: 10.1021/acsnano.5b06960

Abstract

Atomically thin two-dimensional transition-metal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe2 monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-to-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trap-state emission and promote the neutral exciton and trion emission in defective MoSe2 monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe2 layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe2 but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs.

Keywords: layered materials; molybdenum diselenide; photoluminescence; transition-metal dichalcogenides; two-dimensional materials

Publication Types