Display options
Cite
Bär M, Barreau N, Couzinié-Devy F, et al. Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface. ACS Appl Mater Interfaces. 2016;8(3):2120-4doi: 10.1021/acsami.5b10614.
Bär, M., Barreau, N., Couzinié-Devy, F., Weinhardt, L., Wilks, R. G., Kessler, J., & Heske, C. (2016). Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface. ACS applied materials & interfaces, 8(3), 2120-4. https://doi.org/10.1021/acsami.5b10614
Bär, Marcus, et al. "Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface." ACS applied materials & interfaces vol. 8,3 (2016): 2120-4. doi: https://doi.org/10.1021/acsami.5b10614
Bär M, Barreau N, Couzinié-Devy F, Weinhardt L, Wilks RG, Kessler J, Heske C. Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface. ACS Appl Mater Interfaces. 2016 Jan 27;8(3):2120-4. doi: 10.1021/acsami.5b10614. Epub 2016 Jan 12. PMID: 26716913.
Copy Download .nbib Format: NLM
Share it on

ACS Appl Mater Interfaces. 2016 Jan 27;8(3):2120-4. doi: 10.1021/acsami.5b10614. Epub 2016 Jan 12.

Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface.

ACS applied materials & interfaces

Marcus Bär, Nicolas Barreau, François Couzinié-Devy, Lothar Weinhardt, Regan G Wilks, John Kessler, Clemens Heske

Affiliations

  1. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
  2. Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg , Platz der Deutschen Einheit 1, 03046 Cottbus, Germany.
  3. Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV) , 4505 Maryland Parkway, Las Vegas, Nevada 89154-4003, United States.
  4. Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, Centre National de la Recherche Scientifique (CNRS) , 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France.
  5. Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.
  6. ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology , 76344 Eggenstein-Leopoldshafen, Germany.
  7. Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology , Engesserstraße 18/20, 76128 Karlsruhe, Germany.

PMID: 26716913 DOI: 10.1021/acsami.5b10614

Abstract

The interface between a nominal In2S3 buffer and a Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber was investigated by direct and inverse photoemission to determine the interfacial electronic structure. On the basis of a previously reported heavy intermixing at the interface (S diffuses into the absorber; Cu diffuses into the buffer; and Na diffuses through it), we determine here the band alignment at the interface. The results suggest that the pronounced intermixing at the In2S3/CIGSe interface leads to a favorable electronic band alignment, necessary for high-efficiency solar cell devices.

Keywords: In2S3 buffer; band offset; chalcopyrite solar cell; intermixing; inverse photoemission

Publication Types