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Ji WX, Zhang CW, Ding M, et al. Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature. Sci Rep. 2015;5:18604doi: 10.1038/srep18604.
Ji, W. X., Zhang, C. W., Ding, M., Li, P., Li, F., Ren, M. J., Wang, P. J., Hu, S. J., & Yan, S. S. (2015). Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature. Scientific reports, 518604. https://doi.org/10.1038/srep18604
Ji, Wei-Xiao, et al. "Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature." Scientific reports vol. 5 (2015): 18604. doi: https://doi.org/10.1038/srep18604
Ji WX, Zhang CW, Ding M, Li P, Li F, Ren MJ, Wang PJ, Hu SJ, Yan SS. Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature. Sci Rep. 2015 Dec 21;5:18604. doi: 10.1038/srep18604. PMID: 26688269; PMCID: PMC4685648.
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Sci Rep. 2015 Dec 21;5:18604. doi: 10.1038/srep18604.

Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature.

Scientific reports

Wei-Xiao Ji, Chang-Wen Zhang, Meng Ding, Ping Li, Feng Li, Miao-Juan Ren, Pei-Ji Wang, Shu-Jun Hu, Shi-Shen Yan

Affiliations

  1. School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, P. R. China.
  2. School of Physics, State Key laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P.R. China.

PMID: 26688269 PMCID: PMC4685648 DOI: 10.1038/srep18604

Abstract

The search for quantum spin Hall (QSH) insulators with high stability, large and tunable gap and topological robustness, is critical for their realistic application at high temperature. Using first-principle calculations, we predict the cyanogen saturated stanene SnCN as novel topological insulators material, with a bulk gap as large as 203 meV, which can be engineered by applying biaxial strain and electric field. The band topology is identified by Z2 topological invariant together with helical edge states, and the mechanism is s-pxy band inversion at G point induced by spin-orbit coupling (SOC). Remarkably, these systems have robust topology against chemical impurities, based on the calculations on halogen and cyano group co-decorated stanene SnXxX'1-x (X,X'  =  F, Cl, Br, I and CN), which makes it an appropriate and flexible candidate material for spintronic devices.

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