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Bonef B, Haas B, Rouvière JL, et al. Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements. J Microsc. 2016;262(2):178-82doi: 10.1111/jmi.12340.
Bonef, B., Haas, B., Rouvière, J. L., André, R., Bougerol, C., Grenier, A., Jouneau, P. H., & Zuo, J. M. (2016). Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements. Journal of microscopy, 262(2), 178-82. https://doi.org/10.1111/jmi.12340
Bonef, B, et al. "Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements." Journal of microscopy vol. 262,2 (2016): 178-82. doi: https://doi.org/10.1111/jmi.12340
Bonef B, Haas B, Rouvière JL, André R, Bougerol C, Grenier A, Jouneau PH, Zuo JM. Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements. J Microsc. 2016 May;262(2):178-82. doi: 10.1111/jmi.12340. Epub 2016 Jan 08. PMID: 26748639.
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J Microsc. 2016 May;262(2):178-82. doi: 10.1111/jmi.12340. Epub 2016 Jan 08.

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements.

Journal of microscopy

B Bonef, B Haas, J-L Rouvière, R André, C Bougerol, A Grenier, P-H Jouneau, J-M Zuo

Affiliations

  1. Université Grenoble Alpes, Grenoble, France.
  2. CEA, INAC-SP2M, Grenoble, France.
  3. CNRS, Institut Néel, Grenoble, France.
  4. CEA, LETI, MINATEC Campus, Grenoble, France.
  5. Department of Materials Science and Engineering, University of Illinois, Champaign, Illinois, U.S.A.

PMID: 26748639 DOI: 10.1111/jmi.12340

Abstract

The atomic scale analysis of a ZnTe/CdSe superlattice grown by molecular beam epitaxy is reported using atom probe tomography and strain measurements from high-resolution scanning transmission electron microscopy images. CdTe interfaces were grown by atomic layer epitaxy to prevent the spontaneous formation of ZnSe bonds. Both interfaces between ZnTe and CdSe are composed of alloyed layers of ZnSe. Pure CdTe interfaces are not observed and Zn atoms are also visible in the CdSe layers. This information is critical to design superlattices with the expected optoelectronic properties.

© 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Keywords: II-VI semiconductors; atom probe tomography; high-resolution scanning transmission microscopy; interfaces; strain measurements

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