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Mitchell B, Timmerman D, Poplawsky J, et al. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Sci Rep. 2016;6:18808doi: 10.1038/srep18808.
Mitchell, B., Timmerman, D., Poplawsky, J., Zhu, W., Lee, D., Wakamatsu, R., Takatsu, J., Matsuda, M., Guo, W., Lorenz, K., Alves, E., Koizumi, A., Dierolf, V., & Fujiwara, Y. (2016). Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Scientific reports, 618808. https://doi.org/10.1038/srep18808
Mitchell, B, et al. "Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications." Scientific reports vol. 6 (2016): 18808. doi: https://doi.org/10.1038/srep18808
Mitchell B, Timmerman D, Poplawsky J, Zhu W, Lee D, Wakamatsu R, Takatsu J, Matsuda M, Guo W, Lorenz K, Alves E, Koizumi A, Dierolf V, Fujiwara Y. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications. Sci Rep. 2016 Jan 04;6:18808. doi: 10.1038/srep18808. PMID: 26725651; PMCID: PMC4698738.
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Sci Rep. 2016 Jan 04;6:18808. doi: 10.1038/srep18808.

Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications.

Scientific reports

B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, J Takatsu, M Matsuda, W Guo, K Lorenz, E Alves, A Koizumi, V Dierolf, Y Fujiwara

Affiliations

  1. Department of Physics and Astronomy, University of Mount. Union, 1972 Clark Ave, Alliance, OH, 44601, USA.
  2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
  3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
  4. Instituto Superior Técnico, Campus Tecnológico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal.
  5. Department of Physics and Astronomy, Lehigh University, 16 Memorial Dr. E, Bethlehem, PA, 18015, USA.

PMID: 26725651 PMCID: PMC4698738 DOI: 10.1038/srep18808

Abstract

The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions that were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. These findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.

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