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Zhang JL, Ishiwata H, Babinec TM, et al. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers. Nano Lett. 2015;16(1):212-7doi: 10.1021/acs.nanolett.5b03515.
Zhang, J. L., Ishiwata, H., Babinec, T. M., Radulaski, M., Müller, K., Lagoudakis, K. G., Dory, C., Dahl, J., Edgington, R., Soulière, V., Ferro, G., Fokin, A. A., Schreiner, P. R., Shen, Z. X., Melosh, N. A., & Vučković, J. (2016). Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers. Nano letters, 16(1), 212-7. https://doi.org/10.1021/acs.nanolett.5b03515
Zhang, Jingyuan Linda, et al. "Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers." Nano letters vol. 16,1 (2016): 212-7. doi: https://doi.org/10.1021/acs.nanolett.5b03515
Zhang JL, Ishiwata H, Babinec TM, Radulaski M, Müller K, Lagoudakis KG, Dory C, Dahl J, Edgington R, Soulière V, Ferro G, Fokin AA, Schreiner PR, Shen ZX, Melosh NA, Vučković J. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers. Nano Lett. 2016 Jan 13;16(1):212-7. doi: 10.1021/acs.nanolett.5b03515. Epub 2015 Dec 24. PMID: 26695059.
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Nano Lett. 2016 Jan 13;16(1):212-7. doi: 10.1021/acs.nanolett.5b03515. Epub 2015 Dec 24.

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

Nano letters

Jingyuan Linda Zhang, Hitoshi Ishiwata, Thomas M Babinec, Marina Radulaski, Kai Müller, Konstantinos G Lagoudakis, Constantin Dory, Jeremy Dahl, Robert Edgington, Veronique Soulière, Gabriel Ferro, Andrey A Fokin, Peter R Schreiner, Zhi-Xun Shen, Nicholas A Melosh, Jelena Vučković

Affiliations

  1. E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States.
  2. Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.
  3. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States.
  4. Laboratoire des Multimateriaux et Interfaces, Université de Lyon , 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France.
  5. Institute of Organic Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, 35392 Giessen, Germany.

PMID: 26695059 DOI: 10.1021/acs.nanolett.5b03515

Abstract

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

Keywords: Diamond; nanodiamonds; nanofabrication; nanophotonics; silicon carbide; silicon-vacancy (SiV) color center in diamond

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