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Ren D, Dheeraj DL, Jin C, et al. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays. Nano Lett. 2016;16(2):1201-9doi: 10.1021/acs.nanolett.5b04503.
Ren, D., Dheeraj, D. L., Jin, C., Nilsen, J. S., Huh, J., Reinertsen, J. F., Munshi, A. M., Gustafsson, A., van Helvoort, A. T., Weman, H., & Fimland, B. O. (2016). New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays. Nano letters, 16(2), 1201-9. https://doi.org/10.1021/acs.nanolett.5b04503
Ren, Dingding, et al. "New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays." Nano letters vol. 16,2 (2016): 1201-9. doi: https://doi.org/10.1021/acs.nanolett.5b04503
Ren D, Dheeraj DL, Jin C, Nilsen JS, Huh J, Reinertsen JF, Munshi AM, Gustafsson A, van Helvoort AT, Weman H, Fimland BO. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays. Nano Lett. 2016 Feb 10;16(2):1201-9. doi: 10.1021/acs.nanolett.5b04503. Epub 2016 Jan 08. PMID: 26726825.
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Nano Lett. 2016 Feb 10;16(2):1201-9. doi: 10.1021/acs.nanolett.5b04503. Epub 2016 Jan 08.

New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

Nano letters

Dingding Ren, Dasa L Dheeraj, Chengjun Jin, Julie S Nilsen, Junghwan Huh, Johannes F Reinertsen, A Mazid Munshi, Anders Gustafsson, Antonius T J van Helvoort, Helge Weman, Bjørn-Ove Fimland

Affiliations

  1. CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim, Norway.
  2. Center for Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark , DK-2800 Kongens Lyngby, Denmark.
  3. Solid State Physics and NanoLund, Lund University , Box 118, SE-22100 Lund, Sweden.

PMID: 26726825 DOI: 10.1021/acs.nanolett.5b04503

Abstract

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

Keywords: GaAsSb; Nanowires; bandgap tuning; chemical potential; crystal phase engineering; molecular beam epitaxy

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