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Abdelhady AL, Saidaminov MI, Murali B, et al. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals. J Phys Chem Lett. 2016;7(2):295-301doi: 10.1021/acs.jpclett.5b02681.
Abdelhady, A. L., Saidaminov, M. I., Murali, B., Adinolfi, V., Voznyy, O., Katsiev, K., Alarousu, E., Comin, R., Dursun, I., Sinatra, L., Sargent, E. H., Mohammed, O. F., & Bakr, O. M. (2016). Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals. The journal of physical chemistry letters, 7(2), 295-301. https://doi.org/10.1021/acs.jpclett.5b02681
Abdelhady, Ahmed L, et al. "Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals." The journal of physical chemistry letters vol. 7,2 (2016): 295-301. doi: https://doi.org/10.1021/acs.jpclett.5b02681
Abdelhady AL, Saidaminov MI, Murali B, Adinolfi V, Voznyy O, Katsiev K, Alarousu E, Comin R, Dursun I, Sinatra L, Sargent EH, Mohammed OF, Bakr OM. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals. J Phys Chem Lett. 2016 Jan 21;7(2):295-301. doi: 10.1021/acs.jpclett.5b02681. Epub 2016 Jan 07. PMID: 26727130.
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J Phys Chem Lett. 2016 Jan 21;7(2):295-301. doi: 10.1021/acs.jpclett.5b02681. Epub 2016 Jan 07.

Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals.

The journal of physical chemistry letters

Ahmed L Abdelhady, Makhsud I Saidaminov, Banavoth Murali, Valerio Adinolfi, Oleksandr Voznyy, Khabiboulakh Katsiev, Erkki Alarousu, Riccardo Comin, Ibrahim Dursun, Lutfan Sinatra, Edward H Sargent, Omar F Mohammed, Osman M Bakr

Affiliations

  1. Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Kingdom of Saudi Arabia.
  2. Department of Chemistry, Faculty of Science, Mansoura University , Mansoura, 35516, Egypt.
  3. Department of Electrical and Computer Engineering, University of Toronto , Toronto, Ontario M5S 3G4, Canada.
  4. SABIC Corporate Research and Innovation Center, King Abdullah University of Science and Technology (KAUST) , Thuwal, 23955-6900, Kingdom of Saudi Arabia.

PMID: 26727130 DOI: 10.1021/acs.jpclett.5b02681

Abstract

Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi(3+), Au(3+), or In(3+)) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi(3+) incorporation that leads to bandgap tuning (∼300 meV), 10(4) fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors.

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