Display options
Cite
Chen W, Liu Y, Qin Z, et al. A Single Eu-Doped In₂O₃ Nanobelt Device for Selective H₂S Detection. Sensors (Basel). 2015;15(12):29950-7doi: 10.3390/s151229775.
Chen, W., Liu, Y., Qin, Z., Wu, Y., Li, S., & Ai, P. (2015). A Single Eu-Doped In₂O₃ Nanobelt Device for Selective H₂S Detection. Sensors (Basel, Switzerland), 15(12), 29950-7. https://doi.org/10.3390/s151229775
Chen, Weiwu, et al. "A Single Eu-Doped In₂O₃ Nanobelt Device for Selective H₂S Detection." Sensors (Basel, Switzerland) vol. 15,12 (2015): 29950-7. doi: https://doi.org/10.3390/s151229775
Chen W, Liu Y, Qin Z, Wu Y, Li S, Ai P. A Single Eu-Doped In₂O₃ Nanobelt Device for Selective H₂S Detection. Sensors (Basel). 2015 Nov 30;15(12):29950-7. doi: 10.3390/s151229775. PMID: 26633404; PMCID: PMC4721696.
Copy Download .nbib Format: NLM
Share it on

Sensors (Basel). 2015 Nov 30;15(12):29950-7. doi: 10.3390/s151229775.

A Single Eu-Doped In₂O₃ Nanobelt Device for Selective H₂S Detection.

Sensors (Basel, Switzerland)

Weiwu Chen, Yingkai Liu, Zhaojun Qin, Yuemei Wu, Shuanghui Li, Peng Ai

Affiliations

  1. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].
  2. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].
  3. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].
  4. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].
  5. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].
  6. Institute of Physics and Electronic Information Technology, Yunnan Normal University, Kunming 650500, China. [email protected].

PMID: 26633404 PMCID: PMC4721696 DOI: 10.3390/s151229775

Abstract

Eu-doped In₂O₃ nanobelts (Eu-In₂O₃ NBs) and pure In₂O₃ nanobelts (In₂O₃ NBs) are synthesized by the carbon thermal reduction method. Single nanobelt sensors are fabricated via an ion beam deposition system with a mesh-grid mask. The gas-sensing response properties of the Eu-In₂O₃ NB device and its undoped counterpart are investigated with several kinds of gases (including H₂S, CO, NO₂, HCHO, and C₂H₅OH) at different concentrations and different temperatures. It is found that the response of the Eu-In₂O₃ NB device to 100 ppm of H₂S is the best among these gases and the sensitivity reaches 5.74, which is five times that of pure In₂O₃ NB at 260 °C. We also found that the former has an excellent sensitive response and great selectivity to H₂S compared to the latter. Besides, there is a linear relationship between the response and H₂S concentration when its concentration changes from 5 to 100 ppm and from 100 to 1000 ppm. The response/recovery time is quite short and remains stable with an increase of H₂S concentration. These results mean that the doping of Eu can improve the gas-sensing performance of In₂O₃ NB effectually.

Keywords: Eu-doped In2O3; H2S; gas sensor; single nanobelt

References

  1. Adv Mater. 2010 May 4;22(17):1900-4 - PubMed
  2. Nanoscale Res Lett. 2014 Sep 16;9(1):503 - PubMed
  3. Nat Nanotechnol. 2012 Feb;7(2):119-25 - PubMed
  4. Nano Lett. 2013 Jul 10;13(7):3287-92 - PubMed
  5. ACS Appl Mater Interfaces. 2011 Jul;3(7):2246-52 - PubMed
  6. Adv Mater. 2014 May;26(17):2718-24, 2617 - PubMed
  7. Angew Chem Int Ed Engl. 2010 Mar 15;49(12):2154-7 - PubMed
  8. ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21093-100 - PubMed
  9. ACS Appl Mater Interfaces. 2014 Jan 8;6(1):401-9 - PubMed
  10. Sensors (Basel). 2015 Jun 16;15(6):14230-40 - PubMed
  11. Nat Commun. 2014 Jun 05;5:4007 - PubMed

Publication Types