Display options
Cite
Yeh PC, Jin W, Zaki N, et al. Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist. Nano Lett. 2016;16(2):953-9doi: 10.1021/acs.nanolett.5b03883.
Yeh, P. C., Jin, W., Zaki, N., Kunstmann, J., Chenet, D., Arefe, G., Sadowski, J. T., Dadap, J. I., Sutter, P., Hone, J., & Osgood, R. M. (2016). Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist. Nano letters, 16(2), 953-9. https://doi.org/10.1021/acs.nanolett.5b03883
Yeh, Po-Chun, et al. "Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist." Nano letters vol. 16,2 (2016): 953-9. doi: https://doi.org/10.1021/acs.nanolett.5b03883
Yeh PC, Jin W, Zaki N, Kunstmann J, Chenet D, Arefe G, Sadowski JT, Dadap JI, Sutter P, Hone J, Osgood RM. Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist. Nano Lett. 2016 Feb 10;16(2):953-9. doi: 10.1021/acs.nanolett.5b03883. Epub 2016 Jan 20. PMID: 26760447.
Copy Download .nbib Format: NLM
Share it on

Nano Lett. 2016 Feb 10;16(2):953-9. doi: 10.1021/acs.nanolett.5b03883. Epub 2016 Jan 20.

Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist.

Nano letters

Po-Chun Yeh, Wencan Jin, Nader Zaki, Jens Kunstmann, Daniel Chenet, Ghidewon Arefe, Jerzy T Sadowski, Jerry I Dadap, Peter Sutter, James Hone, Richard M Osgood

Affiliations

  1. Department of Electrical Engineering, Columbia University , New York, New York 10027, United States.
  2. Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
  3. Department of Chemistry, Columbia University , New York, New York 10027, United States.
  4. Theoretical Chemistry, TU Dresden , 01062 Dresden, Germany.
  5. Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
  6. Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States.
  7. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln , Lincoln, Nebraska 68588, United States.

PMID: 26760447 DOI: 10.1021/acs.nanolett.5b03883

Abstract

Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2). Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (Γ̅ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ∼40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at Γ̅ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.

Keywords: MoS2; Stacked van der Waals structures; low energy electron microscopy (LEEM); photoemission; spectromicroscopy; twisted van der Waals materials

Publication Types