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Yeom SW, Shin SC, Kim TY, et al. Transparent resistive switching memory using aluminum oxide on a flexible substrate. Nanotechnology. 2016;27(7):07LT01doi: 10.1088/0957-4484/27/7/07LT01.
Yeom, S. W., Shin, S. C., Kim, T. Y., Ha, H. J., Lee, Y. H., Shim, J. W., & Ju, B. K. (2016). Transparent resistive switching memory using aluminum oxide on a flexible substrate. Nanotechnology, 27(7), 07LT01. https://doi.org/10.1088/0957-4484/27/7/07LT01
Yeom, Seung-Won, et al. "Transparent resistive switching memory using aluminum oxide on a flexible substrate." Nanotechnology vol. 27,7 (2016): 07LT01. doi: https://doi.org/10.1088/0957-4484/27/7/07LT01
Yeom SW, Shin SC, Kim TY, Ha HJ, Lee YH, Shim JW, Ju BK. Transparent resistive switching memory using aluminum oxide on a flexible substrate. Nanotechnology. 2016 Feb 19;27(7):07LT01. doi: 10.1088/0957-4484/27/7/07LT01. Epub 2016 Jan 14. PMID: 26763473.
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Nanotechnology. 2016 Feb 19;27(7):07LT01. doi: 10.1088/0957-4484/27/7/07LT01. Epub 2016 Jan 14.

Transparent resistive switching memory using aluminum oxide on a flexible substrate.

Nanotechnology

Seung-Won Yeom, Sang-Chul Shin, Tan-Young Kim, Hyeon Jun Ha, Yun-Hi Lee, Jae Won Shim, Byeong-Kwon Ju

Affiliations

  1. Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul 139-713, Korea.

PMID: 26763473 DOI: 10.1088/0957-4484/27/7/07LT01

Abstract

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

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