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Iqbal MZ, Iqbal MW, Siddique S, et al. Room temperature spin valve effect in NiFe/WS₂/Co junctions. Sci Rep. 2016;6:21038doi: 10.1038/srep21038.
Iqbal, M. Z., Iqbal, M. W., Siddique, S., Khan, M. F., & Ramay, S. M. (2016). Room temperature spin valve effect in NiFe/WS₂/Co junctions. Scientific reports, 621038. https://doi.org/10.1038/srep21038
Iqbal, Muhammad Zahir, et al. "Room temperature spin valve effect in NiFe/WS₂/Co junctions." Scientific reports vol. 6 (2016): 21038. doi: https://doi.org/10.1038/srep21038
Iqbal MZ, Iqbal MW, Siddique S, Khan MF, Ramay SM. Room temperature spin valve effect in NiFe/WS₂/Co junctions. Sci Rep. 2016 Feb 12;6:21038. doi: 10.1038/srep21038. PMID: 26868638; PMCID: PMC4751526.
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Sci Rep. 2016 Feb 12;6:21038. doi: 10.1038/srep21038.

Room temperature spin valve effect in NiFe/WS₂/Co junctions.

Scientific reports

Muhammad Zahir Iqbal, Muhammad Waqas Iqbal, Salma Siddique, Muhammad Farooq Khan, Shahid Mahmood Ramay

Affiliations

  1. Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.
  2. Department of Physics &Astronomy, Georgia State University, Atlanta, GA 30303, USA.
  3. Department of Physics, College of Science, Majmaah University, Al-Zulfi 11932, Saudi Arabia.
  4. Department of Bioscience &Biotechnology, Sejong University, Seoul 143-747, Korea.
  5. Department of Physics &Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  6. Physics &Astronomy Department, College of Science, King Saud University, Riyadh 11451, Saudi Arabia.

PMID: 26868638 PMCID: PMC4751526 DOI: 10.1038/srep21038

Abstract

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

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