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Parri MC, Qiu Y, Walther T. New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy. J Microsc. 2015;260(3):427-41doi: 10.1111/jmi.12345.
Parri, M. C., Qiu, Y., & Walther, T. (2015). New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy. Journal of microscopy, 260(3), 427-41. https://doi.org/10.1111/jmi.12345
Parri, M C, et al. "New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy." Journal of microscopy vol. 260,3 (2015): 427-41. doi: https://doi.org/10.1111/jmi.12345
Parri MC, Qiu Y, Walther T. New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy. J Microsc. 2015 Dec;260(3):427-41. doi: 10.1111/jmi.12345. Epub 2015 Nov 02. PMID: 26769195.
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J Microsc. 2015 Dec;260(3):427-41. doi: 10.1111/jmi.12345. Epub 2015 Nov 02.

New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy.

Journal of microscopy

M C Parri, Y Qiu, T Walther

Affiliations

  1. Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK.
  2. now at: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.

PMID: 26769195 DOI: 10.1111/jmi.12345

Abstract

Theoretical approaches to quantify the chemical composition of bulk and thin-layer specimens using energy-dispersive X-ray spectroscopy in a transmission electron microscope are compared to experiments investigating (In)GaAs and Si(Ge) semiconductors. Absorption correctors can be improved by varying the take-off angle to determine the depth of features within the foil or the samples thickness, or by definition of effective k-factors that can be obtained from plots of k-factors versus foil thickness or, preferably, versus the K/L intensity ratio for a suitable element. The latter procedure yields plots of self-consistent absorption corrections that can be used to determine the chemical composition, iteratively for SiGe using a set of calibration curves or directly from a single calibration curve for InGaAs, for single X-ray spectra without knowledge of sample thickness, density or mass absorption coefficients.

© 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Keywords: Analytical transmission electron microscopy; energy-dispersive X-ray spectroscopy; k-factors; quantification

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