Display options
Cite
Lim A, Foulkes WM, Horsfield AP, et al. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State. Phys Rev Lett. 2016;116(4):043201doi: 10.1103/PhysRevLett.116.043201.
Lim, A., Foulkes, W. M., Horsfield, A. P., Mason, D. R., Schleife, A., Draeger, E. W., & Correa, A. A. (2016). Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State. Physical review letters, 116(4), 043201. https://doi.org/10.1103/PhysRevLett.116.043201
Lim, A, et al. "Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State." Physical review letters vol. 116,4 (2016): 043201. doi: https://doi.org/10.1103/PhysRevLett.116.043201
Lim A, Foulkes WM, Horsfield AP, Mason DR, Schleife A, Draeger EW, Correa AA. Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State. Phys Rev Lett. 2016 Jan 29;116(4):043201. doi: 10.1103/PhysRevLett.116.043201. Epub 2016 Jan 27. PMID: 26871327.
Copy Download .nbib Format: NLM
Share it on

Phys Rev Lett. 2016 Jan 29;116(4):043201. doi: 10.1103/PhysRevLett.116.043201. Epub 2016 Jan 27.

Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

Physical review letters

A Lim, W M C Foulkes, A P Horsfield, D R Mason, A Schleife, E W Draeger, A A Correa

Affiliations

  1. Department of Physics and Thomas Young Centre, Imperial College London, London SW7 2AZ, United Kingdom.
  2. Department of Materials and Thomas Young Centre, Imperial College London, London SW7 2AZ, United Kingdom.
  3. CCFE, Culham Centre for Fusion Energy, Abingdon, Oxfordshire OX14 3DB, United Kingdom.
  4. Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550, USA.

PMID: 26871327 DOI: 10.1103/PhysRevLett.116.043201

Abstract

We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

Publication Types