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Rusu A, Saeidi A, Ionescu AM. Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices. Nanotechnology. 2016;27(11):115201doi: 10.1088/0957-4484/27/11/115201.
Rusu, A., Saeidi, A., & Ionescu, A. M. (2016). Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices. Nanotechnology, 27(11), 115201. https://doi.org/10.1088/0957-4484/27/11/115201
Rusu, Alexandru, et al. "Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices." Nanotechnology vol. 27,11 (2016): 115201. doi: https://doi.org/10.1088/0957-4484/27/11/115201
Rusu A, Saeidi A, Ionescu AM. Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices. Nanotechnology. 2016 Mar 18;27(11):115201. doi: 10.1088/0957-4484/27/11/115201. Epub 2016 Feb 12. PMID: 26872086.
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Nanotechnology. 2016 Mar 18;27(11):115201. doi: 10.1088/0957-4484/27/11/115201. Epub 2016 Feb 12.

Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices.

Nanotechnology

Alexandru Rusu, Ali Saeidi, Adrian M Ionescu

Affiliations

  1. Nanolab, Ecole Polytechnique Fédérale de Lausanne, Switzerland.

PMID: 26872086 DOI: 10.1088/0957-4484/27/11/115201

Abstract

In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landau's theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO2. The proposed analytical modeling shows good agreement with experimental data.

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