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Du W, Yang X, Pan H, et al. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts. Nano Lett. 2016;16(2):877-82doi: 10.1021/acs.nanolett.5b03587.
Du, W., Yang, X., Pan, H., Ji, X., Ji, H., Luo, S., Zhang, X., Wang, Z., & Yang, T. (2016). Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts. Nano letters, 16(2), 877-82. https://doi.org/10.1021/acs.nanolett.5b03587
Du, Wenna, et al. "Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts." Nano letters vol. 16,2 (2016): 877-82. doi: https://doi.org/10.1021/acs.nanolett.5b03587
Du W, Yang X, Pan H, Ji X, Ji H, Luo S, Zhang X, Wang Z, Yang T. Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts. Nano Lett. 2016 Feb 10;16(2):877-82. doi: 10.1021/acs.nanolett.5b03587. Epub 2016 Jan 22. PMID: 26789719.
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Nano Lett. 2016 Feb 10;16(2):877-82. doi: 10.1021/acs.nanolett.5b03587. Epub 2016 Jan 22.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts.

Nano letters

Wenna Du, Xiaoguang Yang, Huayong Pan, Xianghai Ji, Haiming Ji, Shuai Luo, Xingwang Zhang, Zhanguo Wang, Tao Yang

Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, People's Republic of China.
  2. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University , Beijing 100871, People's Republic of China.

PMID: 26789719 DOI: 10.1021/acs.nanolett.5b03587

Abstract

We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.

Keywords: CAFM; HRTEM; InAsSb; Planar nanowire; growth direction

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