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Phys Chem Chem Phys. 2016 Feb 14;18(6):4304-9. doi: 10.1039/c5cp07194a.

Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors.

Physical chemistry chemical physics : PCCP

Shunfeng Wang, Weijie Zhao, Francesco Giustiniano, Goki Eda

Affiliations

  1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542. [email protected].
  2. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542. [email protected] and Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546.

PMID: 26790367 DOI: 10.1039/c5cp07194a

Abstract

We report on the p-type doping effect of oxygen and ozone molecules on mono- and few-layer WSe2 and MoSe2 field effect transistors. We show that adsorption of oxygen and ozone under ambient conditions results in subtantial doping and corresponding enhancement in the hole conductivity of the devices. Ozone-induced doping is found to be rapid and efficient, saturating within minutes of exposure whereas oxygen-induced doping occurs over a period of days to reach the equivalent level of doping. Our observations reveal that the water adlayer on the material surface plays a crucial role in solubilizing oxygen and ozone and in forming a redox couple with a large chemical potential.

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