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Wang S, Zhao W, Giustiniano F, et al. Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. Phys Chem Chem Phys. 2016;18(6):4304-9doi: 10.1039/c5cp07194a.
Wang, S., Zhao, W., Giustiniano, F., & Eda, G. (2016). Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. Physical chemistry chemical physics : PCCP, 18(6), 4304-9. https://doi.org/10.1039/c5cp07194a
Wang, Shunfeng, et al. "Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors." Physical chemistry chemical physics : PCCP vol. 18,6 (2016): 4304-9. doi: https://doi.org/10.1039/c5cp07194a
Wang S, Zhao W, Giustiniano F, Eda G. Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors. Phys Chem Chem Phys. 2016 Feb 14;18(6):4304-9. doi: 10.1039/c5cp07194a. PMID: 26790367.
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